A 94-GHz passive imaging receiver using a balanced LNA with embedded Dicke switch

Gilreath, Leland; Jain, Vipul; Yao, Hsin-Cheng; Zheng, Le; Heydari, Payam

doi:10.1109/rfic.2010.5477289

Cited by 41 publications

(25 citation statements)

References 7 publications

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“…The NETD for 30 ms response time is less than 2 K with the integrated Dicke switch. In summary, we have demonstrated a fully differential passive 100GHz imager with the best NEP and highest responsivity in CMOS to satisfy the stringent passive imaging requirements (previous record responsivity reported by [2] was 43 MV/W). Fig.…”

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confidence: 87%

“…1a shows the proposed passive imaging SoC architecture. Different from previous approaches [1,2], applying an analogue integrator before the ADC, this architecture places the integrator in the digital domain to remove its flicker noise. Therefore, all the circuit flicker noise, including the ADC's, can be sampled and cancelled through the digital multiplier and integrator, which is critical to a CMOS passive imager.…”

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confidence: 99%

“…2c, achieves best performance when biased at the edge of the saturation region and provides the maximum rectification gain, which ultimately leads to the highest detector responsivity. Analysis based on a short channel MOS model [6] predicts detector responsivity, which can be characterised as the second-order derivative of drain current against gate source voltage change, is proportional to the bias current in the subthreshold region, as evidenced by (2). It also implies responsivity can increase with gate source voltage.…”

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confidence: 99%

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100 GHz integrated CMOS passive imager with >100 MV/W responsivity, 23 fW / √ Hz NEP

Gu¹,

Xu²,

Jian³

et al. 2011

Electron. Lett.

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Presented is a 100 GHz fully differential CMOS passive imager for system-on-chip integration, which features high gain, high sensitivity and high resilience to flicker noise and gain variation. It integrates a low-noise amplifier, a Dicke switch, a detector and a baseband programmable gain amplifier in a single chip, and achieves the best noise equivalent power (NEP) (23fW / Hz √ /26fW / Hz √ for without/ with Dicke switch) in CMOS, the highest responsivity (.100 MV/ W) in silicon. It also demonstrates 1.96 K noise-equivalent temperature difference in 30 ms integration time.

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confidence: 87%

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confidence: 99%

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confidence: 99%

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100 GHz integrated CMOS passive imager with >100 MV/W responsivity, 23 fW / √ Hz NEP

Gu¹,

Xu²,

Jian³

et al. 2011

Electron. Lett.

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“…The system NF stated in [3] and the resulting NETD are indeed very low however this all at a steep price of very high power and large area. The current design achieves slightly higher NEP values then those reported in [4] but offers slightly better NETD.…”

Section: Pin [Pw]mentioning

confidence: 99%

“…Several successful realizations of the basic building block (the radiometer) operating in the W-band have been published in the recent years [1]- [3]. Most of these realizations however, included only the core RF segment of the radiometer, with all the baseband signal processing (required for the radiometer to function in a multi-pixel environment) performed off-chip, in a manner and with components that do not lend themselves to facile on-chip integration.…”

Section: Introductionmentioning

confidence: 99%

Analog read-out integragted W-band Dicke-radiometer in 0.13um SiGe design and characterization of W-band radiometer RFIC intended for FPA imager

Shumaker

Elad

2014

2014 44th European Microwave Conference

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A W-band Dicke-radiometer RFIC featuring an on-chip integrated analog read-out back-end optimized for power (75 mW) and area efficiency (0.32 mm 2 ). The RFIC is and realized in a standard IBM8HP 0.13um SiGe BiCMOS process. Initial characterization yields an NEP derived 3-dB system bandwidth of 15 GHz (centered at 92 GHz) with the measured average NEP of 37 fW/√Hz. For 30 msec frame-time this is equivalent to NETD of 0.78 K.

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Power detectors for integrated microwave/mm-wave imaging systems in mainstream silicon technologies

Tang

2016

Solid-State Electronics

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This paper analyzes and compares three different types of detectors, including CMOS power detectors, bipolar power detectors, and super-regenerative detectors, deployed in the literature for integrated microwave/mm-wave imaging systems in mainstream silicon technologies. Each detector has unique working mechanism and demonstrates different behavior with respects to bias conditions, input signal power, as well as bandwidth responses. Two Figure-of-Merits for both wideband and narrowband imaging have been defined to quantify the detector performance comparison. CMOS and Bipolar detectors are good for passive imaging, while super regenerative detectors are superior for active imaging. The analytical results have been verified by both simulation and measurement results. These analyses intend to provide design insights and guidance for integrated microwave/mm-wave imaging power detectors.

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A 94-GHz passive imaging receiver using a balanced LNA with embedded Dicke switch

Cited by 41 publications

References 7 publications

100 GHz integrated CMOS passive imager with >100 MV/W responsivity, 23 fW / √ Hz NEP

100 GHz integrated CMOS passive imager with >100 MV/W responsivity, 23 fW / √ Hz NEP

Analog read-out integragted W-band Dicke-radiometer in 0.13um SiGe design and characterization of W-band radiometer RFIC intended for FPA imager

Power detectors for integrated microwave/mm-wave imaging systems in mainstream silicon technologies

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