A 96% Efficient High-Frequency DC–DC Converter Using E-Mode GaN DHFETs on Si

Das, Jo; Everts, Jordi; Keybus, Jeroen Van den; Hove, M. Van; Visalli, Domenica; Srivastava, Puneet; Marcon, Denis; Cheng, Kai; Leys, Maarten; Decoutere, Stefaan; Driesen, Johan; Borghs, Gustaaf

doi:10.1109/led.2011.2162393

Cited by 58 publications

(25 citation statements)

References 13 publications

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“…Gallium nitride (GaN) is a promising material for high-power/high-frequency electronics [1][2][3][4]. In particular, thick GaN layers on sapphire substrates and freestanding GaN, grown by hydride vapor phase epitaxy (HVPE), are expected to have very high breakdown voltage due to a low density of defects in this material.…”

Section: Introductionmentioning

confidence: 99%

Carbon defects as sources of the green and yellow luminescence bands in undoped GaN

et al. 2014

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In high-purity GaN grown by hydride vapor phase epitaxy, the commonly observed yellow luminescence (YL) band gives way to a green luminescence (GL) band at high excitation intensity. We propose that the GL band with a maximum at 2.4 eV is caused by transitions of electrons from the conduction band to the 0/+ level of the isolated C N defect. The YL band, related to transitions via the −/0 level of the same defect, has a maximum at 2.1 eV and can be observed only for some high-purity samples. However, in less pure GaN samples, where no GL band is observed, another YL band with a maximum at 2.2 eV dominates the photoluminescence spectrum. The latter is attributed to the C N O N complex.

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Section: Introductionmentioning

confidence: 99%

Carbon defects as sources of the green and yellow luminescence bands in undoped GaN

et al. 2014

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“…Indeed, some groups have reported AlGaN/GaN and InAlN/GaN high electron mobility transistors (HEMTs) with excellent device performances such as high blocking voltages and low on-state resistances, which are very attractive for high-efficiency power-switching applications [1][2][3][4][5][6][7][8][9][10][11]. In addition, AlGaN/GaN HEMTs have been demonstrated to operate with good switching characteristics and high power conversion efficiencies when used in DC/DC converters and DC/AC inverters [7,[12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs

Ohi

Asubar

Nishiguchi

et al. 2013

IEEE Trans. Electron Devices

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University. His research interests included surface passivation and device processing technologies for III-V compound semiconductors. Currently, his major activity expanded into characterization and control of surfaces and interfaces of GaN and related materials and their application to GaN-based electron devices. He has authored or co-authored over 160 papers in scientific and technical journals.

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“…Due to excellent characteristics of GaN materials, such as high breakdown field, high current density and high electron saturation velocity, AlGaN/GaN high electron mobility transistors (HEMTs) are well‐suited in the field of high frequency and high power . For radio frequency (RF) switch circuits and digital circuits, enhancement‐mode AlGaN/GaN HEMTs have gained much attention.…”

Section: Introductionmentioning

confidence: 99%

Study of the Temperature Dependence of AlGaN/GaN HEMTs with Oxygen Plasma Treatment

Wang

et al. 2018

Physica Status Solidi (a)

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The temperature-dependent characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) and recessed-gate AlGaN/GaN HEMTs combined with oxygen plasma treatment (rec þ oxy HEMTs) are investigated over a range from 25 to 300 C. The peak transconductance and saturation current of both types of devices decrease with the increase of temperature due to the decline of channel electron mobility. It is interesting to find that the threshold voltage (V TH ) exhibits a positive shift in the conventional HEMT, while a negative shift in the rec þ oxy HEMT with temperature increases. The increase in gate leakage current with the temperature is dominated by tunneling mechanism. Furthermore, the annealing process of 300 and 400 C for 2 min in N 2 ambient are utilized in these two kinds of devices for further estimation, respectively. It is found that the channel mobility can be recovered after the 400 C annealing process, but the V TH shows an obvious negative shift in rec þ oxy HEMTs.

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A 96% Efficient High-Frequency DC–DC Converter Using E-Mode GaN DHFETs on Si

Cited by 58 publications

References 13 publications

Carbon defects as sources of the green and yellow luminescence bands in undoped GaN

Carbon defects as sources of the green and yellow luminescence bands in undoped GaN

Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs

Study of the Temperature Dependence of AlGaN/GaN HEMTs with Oxygen Plasma Treatment

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