A B₂N monolayer: a direct band gap semiconductor with high and highly anisotropic carrier mobility

Abstract

Two-dimensional materials with a planar lattice, a suitable direct band-gap, high and highly anisotropic carrier mobility are desirable for the development of advanced field-effect transistors. Here we predict three thermodynamically...

Comprehensive understanding of electron mobility and superior performance in sub-10 nm DG ML tetrahex-GeC2 n-type MOSFETs

“…[33][34][35][36][37][38][39][40][41][42][43][44][45][46][47][48] Nonetheless, the pursuit of new 2D semiconductors with optimal band gaps, higher mobility, and improved air stability remains essential. [49][50][51][52] Tetrahex-GeC 2 , a novel 2D germanium carbide, displays remarkable electronic and carrier transport properties. It possesses a direct band gap of around 0.89 eV, which is only 0.26 eV less than bulk silicon's band gap of 1.12 eV, 53 thus distinguishing the two logic states in logic switches.…”

“…33–48 Nonetheless, the pursuit of new 2D semiconductors with optimal band gaps, higher mobility, and improved air stability remains essential. 49–52…”

First principles investigation on Na-ion storage in two-dimensional boron-rich B2N, B3N, and B5N

“…34,35 Although the involvement of the metal substrate is advantageous for its epitaxial growth, the strong interfacial interactions also render a great challenge for its exfoliation, which seriously hindered the largescale production and adhibition. [36][37][38][39][40][41] According to the electrondeficient feature of borophene, the incorporation of some nitride atoms is advantageous to enhance its stability, 42,43 which yields new 2D boron-rich inorganic materials named B x N (i.e., B 2 N, B 3 N, and B 5 N). The as-obtained B x N exhibit enhanced stability and weakened interfacial coupling with the Ag substrate.…”

Prediction of a planar BxP monolayer with inherent metallicity and its potential as an anode material for Na and K-ion batteries: a first-principles study

“…Another approach involves the introduction of other atoms capable of forming strong bonds with boron, leading to the discovery of B 2 S 3 , 34 BC 3 , 35 B 3 O, 36 and B 2 Se. 37 More recently, Zhou et al 38 and Lin et al 39 predicted the existence of several new 2D boron-rich materials (B x N), some of which possess unique large ring structures that enable cross-sheet diffusion of metal ions. Unfortunately, the strong localization of π-bonding between boron and hetero atom breaks the electron delocalization within the borophene system, resulting in semi-conductive borophene derivatives.…”