A Back-Illuminated Vertical-Structure Ultraviolet Photodetector Based on an RF-Sputtered ZnO Film

Bi, Ziqiang; Yang, Xiaodong; Zhang, Jingwen; Xuming, Bian; Wang, Dong; Zhang, Xinan; Hou, Xun

doi:10.1007/s11664-008-0601-6

Cited by 25 publications

(5 citation statements)

References 16 publications

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“…In addition, the transient response measurement revealed fast photoresponse with a rise time of 20 ns as shown in Figure 2 . Recently, a back-illuminated vertical-structure ZnO UV detector was fabricated using an indium-tin oxide (ITO) electrode and an Al electrode [ 17 ]. At 5 V bias, the dark current was 640 μA and the photocurrent was 16.8 mA under UV illumination (365 nm, 10 μW), indicating the responsivity as high as 1,616 A/W.…”

Section: Zno-based Photodetectorsmentioning

confidence: 99%

ZnO-Based Ultraviolet Photodetectors

Liu

Sakurai

Aono

2010

Sensors

634

336

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Ultraviolet (UV) photodetection has drawn a great deal of attention in recent years due to a wide range of civil and military applications. Because of its wide band gap, low cost, strong radiation hardness and high chemical stability, ZnO are regarded as one of the most promising candidates for UV photodetectors. Additionally, doping in ZnO with Mg elements can adjust the bandgap largely and make it feasible to prepare UV photodetectors with different cut-off wavelengths. ZnO-based photoconductors, Schottky photodiodes, metal–semiconductor–metal photodiodes and p–n junction photodetectors have been developed. In this work, it mainly focuses on the ZnO and ZnMgO films photodetectors. We analyze the performance of ZnO-based photodetectors, discussing recent achievements, and comparing the characteristics of the various photodetector structures developed to date.

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Section: Zno-based Photodetectorsmentioning

confidence: 99%

ZnO-Based Ultraviolet Photodetectors

Liu

Sakurai

Aono

2010

Sensors

634

336

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“…By using ZnO as a photoconductor layer in different morphologies and structures, such as thin films [70], nanowires and even nanoparticles [71], various types of ZnO-based PDs present with high responsivities, even as high as 10 3 A W −1 for UV light [72]. Since a reverse bias voltage is indispensable for operation of the photoconductor, a dark current is unavoidable in the absence of light, which affects the detecting sensitivity.…”

Section: Photoconductive-effect Pdsmentioning

confidence: 99%

ZnO-based photodetector: from photon detector to pyro-phototronic effect enhanced detector

Zhang

Wang

2019

J. Phys. D: Appl. Phys.

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As a direct bandgap semiconductor, zinc oxide (ZnO) has attracted substantial attention in the UV detecting field because of its wide bandgap and high exciton-binding energy. Benefiting from its pyroelectrical property, the response range of ZnO-based photodetectors can expand to the visible range and even infrared light by using the light-heating effect. In this review, ZnO-based photodetectors are summarized, from pure pyroelectric detectors and traditional photon detectors based on internal photoelectric effects to the hybridized photodetectors with pyroelectric and photoelectric effects. Also, the pyro-phototronic effect is presented as an efficient way to solve the slow response problem of most ZnO-based photodetectors by naturally coupling the light-self-induced pyroelectric effect and internal photoelectric effect. Lastly, we review the recent achievements of these ZnO-based photodetectors, discuss the challenges and look forward to the future of pyro-phototronic effect enhanced photodetectors.

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“…Fast time response ZnO photodetectors were published recently, but all of these works report rise times in $10 À9 s scales, although they are fabricated on good quality thin films. [9][10][11] In this work, we present very low dark current density and very high speed UV photodetectors fabricated with reactively RF magnetron sputtered ZnO thin films on SiO 2 /Si substrates.…”

Section: à9mentioning

confidence: 99%

Low dark current and high speed ZnO metal–semiconductor–metal photodetector on SiO2/Si substrate

Çalışkan

Bütün

Cakir

et al. 2014

Applied Physics Letters

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ZnO thin films are deposited by radio-frequency magnetron sputtering on thermally grown SiO2 on Si substrates. Pt/Au contacts are fabricated by standard photolithography and lift-off in order to form a metal-semiconductor-metal (MSM) photodetector. The dark current of the photodetector is measured as 1 pA at 100 V bias, corresponding to 100 pA/cm2 current density. Spectral photoresponse measurement showed the usual spectral behavior and 0.35 A/W responsivity at a 100 V bias. The rise and fall times for the photocurrent are measured as 22 ps and 8 ns, respectively, which are the lowest values to date. Scanning electron microscope image shows high aspect ratio and dense grains indicating high surface area. Low dark current density and high speed response are attributed to high number of recombination centers due to film morphology, deducing from photoluminescence measurements. These results show that as deposited ZnO thin film MSM photodetectors can be used for the applications needed for low light level detection and fast operation.

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A Back-Illuminated Vertical-Structure Ultraviolet Photodetector Based on an RF-Sputtered ZnO Film

Cited by 25 publications

References 16 publications

ZnO-Based Ultraviolet Photodetectors

ZnO-Based Ultraviolet Photodetectors

ZnO-based photodetector: from photon detector to pyro-phototronic effect enhanced detector

Low dark current and high speed ZnO metal–semiconductor–metal photodetector on SiO2/Si substrate

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