A batch-fabricated silicon thermopile infrared detector

Lahiji, G.R.; Wise, K.D.

doi:10.1109/t-ed.1982.20652

Cited by 89 publications

(22 citation statements)

References 5 publications

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“…For an ideal thermocouple, the voltage is proportional to the temperature difference between the junctions. The Seebeck voltage for a thermopile is then calculated from (4), where is the number of serially interconnected thermocouples [7] (4) where , which are the relative Seebeck coefficients, expressed in V/K and is the temperature difference between the hot and cold junction. Combining (2) and (4), we then obtain (5) The limit for the sensitivity of the thermopile is due to the noise in the detector.…”

Section: B Thermopile Detectorsmentioning

confidence: 99%

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Design of a Micromachined Thermopile Infrared Sensor With a Self-Supported ${\rm SiO}_{2}/{\rm SU}{-}8$ Membrane

et al. 2008

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In the infrared region of the spectrum thermoelectric detectors such as the thermopile are extensively used. These detectors rely on the well-known Seebeck effect, in which there is a direct conversion of thermoelectric differentials into electrical voltage. The temperature difference over thermocouple junctions is in general, created by forming a thin membrane connected to the silicon bulk. In many existing thermopiles, materials such as Si and Si 3 N 4 have been used as membrane. These materials suffer from relatively high thermal conductivity, which lowers the membrane temperature and reduces the sensitivity of the detector. A material such as SU-8 2002 has a much lower thermal conductivity and is applied using standard photolithographic processing steps. This work presents thermal simulations regarding the use of SU-8 2002 as a thermal insulating membrane as compared to Si and Si 3 N 4 . The simulation results presented show that the temperature increase in a 5 m SiO 2 SU 8 membrane is about 9% higher than in a 1 m Si 3 N 4 membrane, despite the membrane thickness being increased by a factor of 5. A thermopile consisting of 196 serially interconnected Ti/Ni thermocouples positioned on a 5 m SiO 2 SU 8 2002 membrane has been fabricated. The sensitivity of the fabricated device has been evaluated in the infrared region, using a 1.56 m IR laser and a xenon arc lamp together with a monochromator. The measurement results show a sensitivity of approximately 5 V/W over the wavelength range between 900-2200 nm. Measurements performed in a vacuum chamber show that the sensitivity of the detector could be increased by more than a factor of 3 by mounting the detector in a vacuum sealed capsule.

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Section: B Thermopile Detectorsmentioning

confidence: 99%

“…For SU-8 2002, which is an epoxy based photoresist developed by Microchem, a value of 0.3 W/mK has been reported [6]. A thermal conductivity of 1.2 W/mK has been presented for SiO [7]. These values could be compared with those of Si and Si N , which have thermal conductivities of 150 W/mK [8] and 3.2 W/mK [9], respectively.…”

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confidence: 99%

Design of a Micromachined Thermopile Infrared Sensor With a Self-Supported ${\rm SiO}_{2}/{\rm SU}{-}8$ Membrane

et al. 2008

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“…However, such a situation may be difficult to realize for thin film MTs on heat conducting substrates. One approach is to use bulk micromachining for the fabrication of microthermocouples [14,35,36] to reduce heat flow from the hot junction to the cold junction by etching the bulk of the substrate, thereby ensuring better thermal isolation of hot and cold junctions. Another approach was reported by Kreider et al [37] on their use of 38 mm long Platinum-Palladium thin film thermocouples on a chip of 45 mm × 10 mm for rapid thermal processing (RTP).…”

Section: Determination Of Heat Transfer Coefficients Of the Mt And Pamentioning

confidence: 99%

A Steady State, Thermal Model of an On-Chip Assembly of RTD Heaters, Sputtered Sample and Microthermocouples

Imran

Bhattacharyya

2006

Ferroelectrics

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An experimentally validated one-dimensional (1D) steady state, analytical model has been presented in this paper for the in-plane thermal field of an on-chip assembly of a Resistance Temperature Detector (RTD), a sputtered thin film and microthermocouples (MT). The model is used to suggest a threshold condition for the design of an MT that may result in an overheating of the two cold junctions of the MT beyond the ambient temperature, as well as asymmetry between the two cold junction temperatures. A second threshold condition is suggested for the range of normalized thermal conductivities of the sputtered thin film that will have an impact on the thermal field. Such a model may be useful for preliminary design of structures to determine in-plane thermal conductivities of isotropic sputtered thin films.

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“…6 Since MEMS technology favors in-plane devices, most of these applications exploit the in-plane thermophysical material properties. [1][2][3][4] Recent progress in material research enables the application of novel, high-performance, thermoelectric materials 5 and improved conventional materials 7 in microsystems.…”

Section: Introductionmentioning

confidence: 99%

Compact Test Structure to Measure All Thermophysical Properties for the In-Plane Figure of Merit ZT of Thin Films

Moser

Mueller

Oliver

2016

Journal of Elec Materi

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This paper reports a versatile thermophysical test structure to measure all material properties contributing to the in-plane thermoelectric figure of merit ZT ¼ S 2 Tj À1 q À1 from a single thin film sample of only about 0.5 mm 2 . These properties are the Seebeck coefficient S of the sample against aluminum (Al), its thermal conductivity j , and its resistivity q. The thermal membrane-based test structure is produced using standard thin film deposition and structuring processes followed by silicon micromachining. It can be used to characterize thin films deposited at high temperature, such as doped polycrystalline silicon (poly-Si), as well as films deposited at low temperature, e.g., sputtered metals. We present the measurement of all components of the ZT of low-pressure, chemical vapor-deposited n-and p-doped poly-Si thin films in the temperature range from 300 K to 380 K. Values of 1.46 9 10 À2 and 0.95 9 10 À2 were found at room temperature (RT) for the ZT of n-and p-doped poly-Si films, respectively. Furthermore, the test structure was used to extract q and j of a sputtered aluminum film in the same temperature range. The respective RT values are 48.7 9 10 À9 Xm and 154 W m À1 K À1 .

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A batch-fabricated silicon thermopile infrared detector

Cited by 89 publications

References 5 publications

Design of a Micromachined Thermopile Infrared Sensor With a Self-Supported ${\rm SiO}_{2}/{\rm SU}{-}8$ Membrane

Design of a Micromachined Thermopile Infrared Sensor With a Self-Supported ${\rm SiO}_{2}/{\rm SU}{-}8$ Membrane

A Steady State, Thermal Model of an On-Chip Assembly of RTD Heaters, Sputtered Sample and Microthermocouples

Compact Test Structure to Measure All Thermophysical Properties for the In-Plane Figure of Merit ZT of Thin Films

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