A Benchtop X-Ray Diffractometer as a Tool for Thin Film Characterization

Abstract

An application of compact benchtop X-ray diffractometer for investigation of thin film semiconductor structures was demonstrated. A depth-dependent qualitative phase analysis of multilayer polycrystalline CuInGaSe2-based solar cell structure was performed. The independent goniometer allowed determination of residual stress values in the molybdenum layer of the solar cell. Grazing-incidence X-ray diffractometry was used to estimate polycrystallinity degree of AlN layers grown by molecular beam epitaxy and correlate it with the growth temperature. X-ray reflectometry measurement were also performed for nucleation AlN layer.