“…A 300-GHz-band mixers with a wide RF bandwidth and high linearity are essential components for utilizing such a wide band and achieving a high data rate. Mixers with a wide bandwidth fabricated in indium phosphide (InP) high electron mobility transistor (HEMT), InP heterojunction bipolar transistor (HBT), silicon complementary metal-oxide-semiconductor (CMOS), and silicon-germanium (SiGe) bipolar CMOS (BiCMOS) technologies have been reported [2], [3], [4], [5], [6], [7], [8], [9], [10], [11]. Among them, the resistive mixer [2], [3] has the advantages of having a wide band and high linearity with a simple configuration.…”