A Bias-Dependent Single-Event Compact Model Implemented Into BSIM4 and a 90 nm CMOS Process Design Kit

Kauppila, J. S.; Sternberg, Andrew L.; Alles, Michael L.; Francis, A. Matthew; Holmes, Jim; Amusan, O.A.; Massengill, L.W.

doi:10.1109/tns.2009.2033798

Cited by 135 publications

(43 citation statements)

References 9 publications

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“…The amplitude of this current plateau is linked to the PMOS drive, and the duration of the plateau is synchronous with the depressed drain voltage. As soon as most of the deposited charge flows out of the struck transistor, the current flow cannot be maintained, the equilibrium conditions relax, the drain voltage recovers and the current pulse again decreases toward zero [2,26]. This second example illustrates the importance of device coupling effects at circuit-level and its consequences on the charge collection dynamics in the impacted device.…”

Section: Transient Simulation Of a Cmos Invertermentioning

confidence: 93%

Charge Collection Physical Modeling for Soft Error Rate Computational Simulation in Digital Circuits

Autran¹,

Munteanu²,

Moindjie³

et al. 2016

Modeling and Simulation in Engineering Sciences

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This chapter describes a new computational approach for accurately modeling radiation-induced single-event transient current and charge collection at circuit level. This approach, called random-walk drift-diffusion (RWDD), is a fast Monte Carlo particle method based on a random-walk process that takes into account both diffusion and drift of carriers in a non-constant electric field both in space and time. After introducing the physical insights of the RWDD model, the chapter details the practical implementation of the method using an object-oriented programming language and its parallelization on graphical processing units. Besides, the capability of the approach to treat multiple node charge collection is presented. The chapter also details the coupling of the model either with an internal routine or with SPICE for circuit solving. Finally, the proposed approach is illustrated at device and circuit level, considering four different test vehicles in 65 nm technologies: a stand-alone transistor, a CMOS inverter, a SRAM cell and a flip-flop circuit. RWDD results are compared with data obtained from a full three-dimensional (3D) numerical approach (TCAD simulations) at transistor level. The importance of the circuit feedback on the charge-collection process is also demonstrated for devices connected to other circuit nodes.

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Section: Transient Simulation Of a Cmos Invertermentioning

confidence: 93%

Charge Collection Physical Modeling for Soft Error Rate Computational Simulation in Digital Circuits

Autran¹,

Munteanu²,

Moindjie³

et al. 2016

Modeling and Simulation in Engineering Sciences

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“…Кусочно-линейная аппроксимация. Рост вычислительных мощностей потенциально позволяет использовать приборно-технологическое модели-рование для характеризации ионизационного отклика при воздействии ТЗЧ на базовые для каждой технологии полупроводниковые структуры с глубоко-субмикронными про-ектными нормами с учетом эффектов формы импульса тока и собирания заряда не-сколькими элементами [19]. При этом для описания формы импульса при схемотехни-ческом моделировании используется независимая кусочно-линейная функция [20].…”

Section: Avulan@spelsruunclassified

Circuit Engineering Modeling of Single Event Effects under Impact of Heavy-Charged Particles in SUB-100 NM CMOS ICs

Smolin¹,

Boruzdina²,

Ulanova³

et al. 2017

PofUE

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Традиционные подходы к схемотехническому моделированию оди-ночных эффектов при воздействии тяжелых заряженных частиц (ТЗЧ) в КМОП СБИС, основанные на использовании двухэкспоненциальной мо-дели импульса тока ионизационной реакции, оказываются не всегда при-менимыми при переходе к суб-100-нм проектным нормам.Представлен обзор основных подходов к решению двух главных за-дач, возникающих при схемотехническом моделировании одиночных эф-фектов в суб-100-нм СБИС: учет влияния электрического режима на про-цесс формирования импульса ионизационного отклика и учет собирания заряда с трека ТЗЧ несколькими чувствительными элементами. В качестве решения первой задачи предложены подходы, основанные на использова-нии кусочно-линейного задания импульса тока на основе TCAD-расчетов, сдвоенного двухэкспоненциального источника тока и источника тока, учитывающего электрический режим транзистора. Рассмотрены способы моделирования ионизационного отклика нескольких элементов от одной ТЗЧ на основе использования lookup-таблиц и аналитических моделей за-висимости ионизационного отклика от места попадания частицы.Проведенный анализ современных подходов к моделированию эф-фектов сбоев и импульсов ионизационной помехи в КМОП-микросхемах позволяет заключить, что наиболее гибким и физически точным является подход, основанный на использовании источника тока, учитывающего электрический режим транзистора и встраиваемого в Verilog-A код исход-ной модели.

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“…The transient current has been modeled using double exponential function expressed as equation (1) in reference [1]. However for ultra deep submicron technologies, the traditional double exponential model proposed for early technologies cannot exactly describe the transient current in ultra deep sub-micron MOS transistors any more [4]. Based on theory analysis and TCAD semiconductor physics simulation, this paper develops a novel multi-dimensional double exponential transient current model for 65 nm bulk silicon MOSFETs with varying sizes at varying LET values.…”

Section: Single Event Transient Current Modelmentioning

confidence: 99%

Collection of charge in NMOS from single event effect

Wang

Lin

Wang

et al. 2016

IEICE Electron. Express

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In aerospace environment, single event effect (SEE) will occur and single event transient (SET) current pulse will be induced in drain/source region of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) when high energy ion strikes semiconductor devices. The typical double exponential transient current model proposed for traditional technology is not suitable for ultra deep sub-micron technology devices. In this paper, a novel multi-dimensional double exponential transient current model is proposed based on our new understanding of ultra deep sub-micron radiation mechanism, which has been validated using Technology Computer Aided Design (TCAD) simulation. This model can be important basis for the searching of SEE at circuit level and can be transparently applied to evaluate the effectiveness and performance of hardening technique, thus shortening the developing cycle of integrated circuit intended to operate within aerospace environment.

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A Bias-Dependent Single-Event Compact Model Implemented Into BSIM4 and a 90 nm CMOS Process Design Kit

Cited by 135 publications

References 9 publications

Charge Collection Physical Modeling for Soft Error Rate Computational Simulation in Digital Circuits

Charge Collection Physical Modeling for Soft Error Rate Computational Simulation in Digital Circuits

Circuit Engineering Modeling of Single Event Effects under Impact of Heavy-Charged Particles in SUB-100 NM CMOS ICs

Collection of charge in NMOS from single event effect

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