A bioinspired 2-DOF throwing robot

Frank, Heinz; Frank, Thorsten; Mittnacht, A.; Sichau, Christian

doi:10.1109/afrcon.2011.6071965

Cited by 4 publications

(2 citation statements)

References 14 publications

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“…A 1-DoF rotational robot capable of throwing a ball up to 8 m with high precision was discussed in [5]. A throwing model with simple kinematics including an air drag influence was presented in [6]. Miyashita et al [7], [8] suggested a control strategy for a 1-DoF rotational robot with edges based on iteration optimization learning.…”

Section: Introductionmentioning

confidence: 99%

Optimal control goal manifolds for planar nonprehensile throwing

Pekarovskiy

Buss

2013

2013 IEEE/RSJ International Conference on Intelligent Robots and Systems

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Abstract-This paper presents a throwing motion planner based on a goal manifold for two-point boundary value problem. The article outlines algorithmic and geometric issues for planar throwing of rigid objects with a nonprehensile end-effector. Special attention is paid to the challenge of controlling a desired 6-dimensional state of the object with a planar 3-DoF robot. Modeling of the contacts is discussed using a state vector of the coupled robot and object dynamics. Robustness against uncertainty due to varying model parameters such as object inertia and friction between the end-effector and the object is investigated. An approach for obtaining manifolds of terminal constraints from the goal configuration is described. Classification of these constraints is given. Finally, feasible trajectory generation conditions for successful execution of the generated optimal controls are discussed.

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Section: Introductionmentioning

confidence: 99%

Optimal control goal manifolds for planar nonprehensile throwing

Pekarovskiy

Buss

2013

2013 IEEE/RSJ International Conference on Intelligent Robots and Systems

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“…As CMOS technology downscales into sub-22 nm nodes, high-K & metal gate (HKMG) technology has become the mainstream in order to reduce leakage as well as to improve device performance. Two different HKMG integration schemes, i.e., gate-first and gate-last (replacement gate) process [1], [2], which are usually adopted in the mass production fabrication. In the replacement gate process, one of the biggest challenges is to fill gate trench of high aspect-ratio with conductive metals, such as Al [3] or W [4].…”

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confidence: 99%