A biperiodic interfacial pattern of misfit dislocation interacting with both free surfaces of a thin bicrystalline sandwich

Outtas, Toufik; Adami, Lahbib; Bonnet, R.

doi:10.1016/s1293-2558(01)01212-2

Cited by 3 publications

(2 citation statements)

References 12 publications

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“…The practical sense of this h c is that it shows the thickness of the shell (film) which must be grown on the core (substrate) to guarantee the composite nanostructure against the PDL generation in the shell (film). It is clearly seen that this critical thickness h c has the opposite sense in respect to the traditional definition of the critical thickness of the film, at which the generation of misfit dislocations in a flat system becomes energetically favorable [22,[24][25][26][27][59][60][61][62][63][64][65][66][67][68][69]75].…”

Section: Resultsmentioning

confidence: 99%

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Initial stages of misfit stress relaxation in composite nanostructures through generation of rectangular prismatic dislocation loops

Gutkin

Смирнов

2015

Acta Materialia

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Section: Resultsmentioning

confidence: 99%

“…[28,33,35,51,52], in bi-nanolayers in Refs. [22,[59][60][61][62][63][64][65][66][67][68][69] and in tri-nanolayers in Ref. [22].…”

Section: Modelsmentioning

confidence: 99%

Initial stages of misfit stress relaxation in composite nanostructures through generation of rectangular prismatic dislocation loops

Gutkin

Смирнов

2015

Acta Materialia

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Anisotropic elasticity of multilayered crystals deformed by a biperiodic network of misfit dislocations

2007

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We investigate the displacement and stress fields associated with a biperiodic misfit dislocation network located along a single interface in a multilayered crystal composite of ͑N −1͒ thin bonded anisotropic elastic layers sandwiched between two semi-infinite anisotropic media. Specifically, dislocation networks of coplanar, biperiodic, hexagonal-based linear misfit are considered within continuum elasticity theory. While the homogeneous solutions are obtained by using the double Fourier series and the Stroh formalism, the solutions for multilayered structures are expressed in terms of a transfer matrix technique and the generalized Barnett-Lothe tensors. The transfer matrix technique lends itself to composites containing large numbers of bonded crystal layers because only a 3 ϫ 3 matrix inversion is required. The use of the generalized Barnett-Lothe tensor facilitates the treatment of inherent elastic anisotropy in the constituent crystals. The correctness and the versatility of the method are illustrated by calculating the stress field associated with a multilayer formed by alternating GaAs and Si layers ͑N =5͒ containing a single array of edge misfit dislocations along one interface. To further demonstrate the influence of the material anisotropy, numerical examples for the misfit dislocation induced stresses are given for the ͑N =5͒ multilayered structure ͑formed by GaAs and Si͒ and for the induced surface displacements for an InAs thin film over a GaAs substrate. Both cubic and simplified isotropic materials are considered.

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Stress and Displacement Fields Around Misfit Dislocation in Anisotropic Dissimilar Materials With Interface Stress and Interface Elasticity

Koguchi

Hirasawa

2015

Journal of Applied Mechanics

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Interfaces frequently exist in polycrystalline and multiphase materials. In nanoscale joints, interface properties, such as interface stresses and interface elasticity, influence the stress and displacement field near the interface. Generally, a misfit dislocation exists in the interface due to the mismatch of lattice length in crystals composing the joints. In the present paper, a misfit dislocation is introduced to a coherent interface in order to calculate the stress and displacement distributions in an incoherent interface. A model with an interface zone transferring traction only in the zone from one region to the opposite region is proposed, because these regions slip against each other due to the misfit dislocation. The traction in the interface depends on the displacement and the interface properties. Stresses and displacements considering the interface properties are deduced using a three-dimensional Stroh’s formalism. Bulk stress and displacements around the misfit dislocation are shown to increase with increasing the values of the interface stress and the interface elastic moduli. The stresses and displacements obtained from the derived solutions are compared with those obtained through molecular dynamic (MD) analysis. It is shown that the proposed interface zone model can adequately express the displacement and stress near the misfit dislocation.

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A biperiodic interfacial pattern of misfit dislocation interacting with both free surfaces of a thin bicrystalline sandwich

Cited by 3 publications

References 12 publications

Initial stages of misfit stress relaxation in composite nanostructures through generation of rectangular prismatic dislocation loops

Initial stages of misfit stress relaxation in composite nanostructures through generation of rectangular prismatic dislocation loops

Anisotropic elasticity of multilayered crystals deformed by a biperiodic network of misfit dislocations

Stress and Displacement Fields Around Misfit Dislocation in Anisotropic Dissimilar Materials With Interface Stress and Interface Elasticity

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