A bistable defect in electron-irradiated boron-doped silicon

Bains, Santo; Banbury, P C

doi:10.1088/0022-3719/18/5/002

Cited by 45 publications

(11 citation statements)

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“…The E v + 0.11 eV level is seen by DLTS when the sample is heated at 220 K for 30 min under reverse bias followed by quenching to 80 or 40 K. [4][5][6] The other pair is detected after cooling under zero or forward bias and since this pair of levels always give the same amplitude ratio, they were attributed to the same atomic configuration ͑labeled A͒. 4 The third level, at E v + 0.11 eV, is due to a different configuration labeled B. Configuration B can be converted back to A again by a second anneal, this time under zero bias.…”

Section: Introductionmentioning

confidence: 98%

“…At low temperatures, the defect is trapped in one of these states but between 30 and 80 K it is able to switch to the other electronic configuration, surmounting a barrier of 0.044 eV. 2 Deep level transient spectroscopic ͑DLTS͒ studies on e-irradiated boron-doped Si which has been annealed to 150-200 K when vacancies become mobile, reveal three levels at E v + 0.31, E v + 0.37, and E v + 0.11 eV thought to be associated with B s V. [4][5][6] From published data, 4-7 we assess the hole-capture cross sections to be about 6 -10ϫ 10 −16 cm 2 , 1-5ϫ 10 −17 cm 2 and about 4 ϫ 10 −16 cm 2 for the E v + 0.31, E v + 0.37, and E v + 0.11 eV levels, respectively.…”

Section: Introductionmentioning

confidence: 99%

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Theory of boron-vacancy complexes in silicon

et al. 2005

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The substitutional boron-vacancy B s V complex in silicon is investigated using the local density functional theory. These theoretical results give an explanation of the experimentally reported, well established metastability of the boron-related defect observed in p-type silicon irradiated at low temperature and of the two hole transitions that are observed to be associated with one of the configurations of the metastable defect. B s V is found to have several stable configurations, depending on charge state. In the positive charge state the second nearest neighbor configuration with C 1 symmetry is almost degenerate with the second nearest neighbor configuration that has C 1h symmetry since the bond reconstruction is weakened by the removal of electrons from the center. A third nearest neighbor configuration of B s V has the lowest energy in the negative charge state. An assignment of the three energy levels associated with B s V is made. The experimentally observed E v + 0.31 eV and E v + 0.37 eV levels are related to the donor levels of second nearest neighbor B s V with C 1 and C 1h symmetry respectively. The observed E v + 0.11 eV level is assigned to the vertical donor level of the third nearest neighbor configuration. The boron-divacancy complex B s V 2 is also studied and is found to be stable with a binding energy between V 2 and B s of around 0.2 eV. Its energy levels lie close to those of the V 2 . However, the defect is likely to be an important defect only in heavily doped material.

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Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Theory of boron-vacancy complexes in silicon

et al. 2005

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“…Thus it should be assigned to the Bs+V center. An electronic level at <Ev1M0.13 eV has been assigned by Bains and Banbury [8] to this center.However the fact that it is the major defect in pulled specimens which have high oxygen concentration should be considered,…”

Section: Methodsmentioning

confidence: 83%

“…The peak at 100 K is easy to identify.The electronic level associated with it is at Evl+0.1 8 eV, It anneals out at 160 K and should be attributed to the vacancy,…”

Section: Methodsmentioning

confidence: 97%

Evidence of Defect Levels in P and N-Type Electron Irradiated Si

Kouimtzi

1990

MRS Proc.

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“…After the annealing at 460'C, three kinds of hole traps denoted by H 1, H2 and H3 are produced, the energy levels of which are Et-Ev=0.14±0.01, 0.43±0.02 and 0.52±0.02 eV, respectively. The origin of HI is considered to be due to Si vacancies (0.13 eV [28]) and those of H2 and H3 are complexes of B atoms with vacancies or interstitial Si atoms [29], whose average densities are 4x10 12 , IxI0 13 and lxlO1 3 cm-3 , respectively. These vacancy/interstitial-related traps are considered to be formed by the silicidation at 460'C, which indicates that the silicidation reaction at the interface with H-termination takes place at higher temperatures than that without H-termination, as mentioned above.…”

Section: H-termination Effects On Electrical Characteristicsmentioning

confidence: 99%

Interfacial Defects Induced by Silicidation and Effects of H-Termination at Metal/Silicon Contacts

Zaima

1995

MRS Proc.

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We have investigated crystallographic structures and electrical properties at the interfaces of transition metals such as Ti, Zr, Hf and V and Si(100), from the viewpoint of an application to ohmic contacts in future ULSI's with low contact resistivity and high reliability. We have achieved very low contact resistivities of 3-5x10-8 Qcm 2 for Zr/ and Hf/n+-Si(100) contacts and 1-2x1O-7 Qcm 2 for p+-Si at 400-600 0 C. It is found that the silicidation reaction in this temperature range brings about the formation of deep levels associated with vacancies in Hf/Si and with metal atoms in V/Si. This difference is considered to be related to that in the silicide formation process between these systems. Furthermore, an anomalous electrical characteristics observed for Hf/p-Si contacts has been found to be markedly improved by using a H-termination treatment of Si surfaces.

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A bistable defect in electron-irradiated boron-doped silicon

Cited by 45 publications

References 5 publications

Theory of boron-vacancy complexes in silicon

Theory of boron-vacancy complexes in silicon

Evidence of Defect Levels in P and N-Type Electron Irradiated Si

Interfacial Defects Induced by Silicidation and Effects of H-Termination at Metal/Silicon Contacts

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