A Bottom Semi-Superjunction IGBT With Improving Relationship Between P/N doping and V<sub>ce,sat</sub>

Ou, Yangjie; Lu, Shan; Coa, Wie; Liu, Dong

doi:10.1109/iciea54703.2022.10006157

Cited by 1 publication

(1 citation statement)

References 12 publications

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“…Since the introduction of SJ technology with IGBTs in the 1980s, it has been considered the most innovative and critical concept in the field of power devices. It remains the sole concept to challenge and ultimately prove the limitations of silicon in high-voltage devices [8]. Introducing SJ technology has significantly enhanced the performance of IGBTs, not only improving efficiency but also reducing energy consumption, providing crucial technical support for the advancement of power electronics.…”

Section: Super-junction Technologymentioning

confidence: 99%

Performance evaluation and stability analysis of super-junction IGBTs in high-temperature environments

Lou,

Xiao

2024

J. Phys.: Conf. Ser.

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This paper aims to evaluate and analyze the performance and stability of super-junction IGBTs (Insulated Gate Bipolar Transistors) in high-temperature environments. The study begins with an overview of the significance of IGBTs in the field of power electronics. It provides a comprehensive discussion of the advantages of super-junction technology and the challenges posed by high temperatures on the performance of IGBTs. Through a series of experiments on various commercial super-junction IGBT models, this research thoroughly assesses the devices’ saturated current, threshold voltage, leakage current, switching time, and switching losses at different temperature points (25°C, 75°C, 125°C, and 175°C). The experimental results demonstrate a significant impact of high temperatures on the performance of IGBTs, particularly in terms of changes in saturated current and threshold voltage. Additionally, the study predicts the lifespan of super-junction IGBTs through High-Temperature Operating Life (HTOL) testing and analyzes the failure modes in high-temperature environments. The results indicate that the expected lifespan of the devices significantly decreases with increasing temperature, with primary failure modes including degradation of the gate oxide layer, an increase in interface traps, and disruption in conductive pathways. The paper also compares experimental results with existing literature, emphasizing the potential and importance of optimized design for super-junction IGBTs in high-temperature environments. The study suggests that improvements in materials, structural design, manufacturing processes, and innovative cooling technologies can further enhance the performance and stability of IGBTs in high-temperature applications. Finally, this research provides new insights into the development of super-junction IGBTs in high-temperature power applications and offers valuable references for professionals in related fields.

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Section: Super-junction Technologymentioning

confidence: 99%

Performance evaluation and stability analysis of super-junction IGBTs in high-temperature environments

Lou,

Xiao

2024

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

show abstract

A Bottom Semi-Superjunction IGBT With Improving Relationship Between P/N doping and V_ce,sat

Cited by 1 publication

References 12 publications

Performance evaluation and stability analysis of super-junction IGBTs in high-temperature environments

Performance evaluation and stability analysis of super-junction IGBTs in high-temperature environments

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A Bottom Semi-Superjunction IGBT With Improving Relationship Between P/N doping and Vce,sat

Cited by 1 publication

References 12 publications

Performance evaluation and stability analysis of super-junction IGBTs in high-temperature environments

Performance evaluation and stability analysis of super-junction IGBTs in high-temperature environments

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Product

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A Bottom Semi-Superjunction IGBT With Improving Relationship Between P/N doping and V_ce,sat