A brief history of defect formation, segregation, faceting, and twinning in melt-grown semiconductors

Hurle, D.T.J.; Rudolph, P.

doi:10.1016/j.jcrysgro.2003.12.035

Cited by 107 publications

(66 citation statements)

References 70 publications

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“…21 It has also been suggested that the planar defects such as twins can cost energy ͑although very small͒. 28 The facts that ͑i͒ GaSb nanowires have been fully relaxed where the strain energy= 0 ͑when ignoring the transition region near the GaAs/ GaSb interface͒ and ͑ii͒ no lattice defects in GaSb nanowires ͑where the defects associated energy= 0͒ suggest that the system energy for GaSb nanowires reaches its minimum. This indicates that the growth of GaSb is governed by thermodynamics, in which each growth step requires the system to reach a minimum energy state.…”

Section: ͑1͒mentioning

confidence: 99%

Structural characteristics of GaSb∕GaAs nanowire heterostructures grown by metal-organic chemical vapor deposition

Guo

Zou

Paladugu

et al. 2006

Applied Physics Letters

104

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Highly lattice mismatched (7.8%) GaAs∕GaSb nanowire heterostructures were grown by metal-organic chemical vapor deposition and their detailed structural characteristics were determined by electron microscopy. The facts that (i) no defects have been found in GaSb and its interfaces with GaAs and (ii) the lattice mismatch between GaSb∕GaAs was fully relaxed suggest that the growth of GaSb nanowires is purely governed by the thermodynamics. The authors believe that the low growth rate of GaSb nanowires leads to the equilibrium growth.

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Section: ͑1͒mentioning

confidence: 99%

Structural characteristics of GaSb∕GaAs nanowire heterostructures grown by metal-organic chemical vapor deposition

Guo

Zou

Paladugu

et al. 2006

Applied Physics Letters

104

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“…For Si a very high level of perfection has been achieved, with vanishingly low defect densities. 1 In compound semiconductors, the problem is more complex since, in addition to vacancies and interstitial defects, antisite defects may also occur. The relative concentrations of the defects as well as their charge states determine the Fermi level position.…”

Section: Introductionmentioning

confidence: 99%

Point defects on the (110) surfaces ofInP,InAs, andInSb: A comparison with bulk

et al. 2006

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The basic properties of point defects, such as local geometries, positions of charge-transfer levels, and formation energies, have been calculated using density-functional theory, both in the bulk and on the ͑110͒ surface of InP, InAs, and InSb. Based on these results we discuss the electronic properties of bulk and surface defects, defect segregation, and compensation. In comparing the relative stability of the surface and bulk defects, it is found that the native defects generally have higher formation energies in the bulk. From this it can be concluded that at equilibrium there is a considerably larger fraction of defects at the surface and under nonequilibrium conditions defects are expected to segregate to the surface, given sufficient time. In most cases the charge state of a defect changes upon segregation, altering the charge-carrier concentrations. The photothresholds are also calculated for the three semiconductors and are found to be in good agreement with experimental data.

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“…Various references for impurity distribution or segregation include. [105][106][107][108][109] Silicon crystals grown by the Czochralski method tends to be contaminated by oxygen. Silicon may be contaminated by various impurities during crystal growth or subsequent processing.…”

Section: History Of Semiconductor Crystal Growth Technologymentioning

confidence: 99%

Introduction to the History of Semiconductors

Lau¹

2017

ULSI Front-End Technology

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A brief history of defect formation, segregation, faceting, and twinning in melt-grown semiconductors

Cited by 107 publications

References 70 publications

Structural characteristics of GaSb∕GaAs nanowire heterostructures grown by metal-organic chemical vapor deposition

Structural characteristics of GaSb∕GaAs nanowire heterostructures grown by metal-organic chemical vapor deposition

Point defects on the (110) surfaces ofInP,InAs, andInSb: A comparison with bulk

Introduction to the History of Semiconductors

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