“…For instance, SAQD-based devices help achieve single-electron charge sensing [ 12 ], entanglement between spins and photons [ 13 , 14 ], single-photon sources [ 15 ], or single-spin [ 16 ], and help also the control of Cooper pair splitting [ 17 ], spin transport [ 18 ], spin–orbit interaction [ 19 ], g -factor [ 20 ], and Kondo effect [ 21 ]. On the other hand, SAQD technologies allow for manufacturing high density of QDs, which are crucial for implementing opto-electronic devices such as QD-based light-emitting diodes (LEDs) [ 22 ], QD-memories [ 4 , 23 ], QD-lasers [ 24 , 25 , 26 , 27 ], QD-infrared photodetectors [ 8 , 28 , 29 ], and QD-solar cells [ 30 ]. A key point in these devices is that the position of carrier level(s) can be tuned by controlling the dot size [ 2 ], and, this, by modifying the growth conditions [ 6 , 10 , 11 , 31 ].…”