A Broadband Dual-Polarized Terahertz Direct Detector in a 0.13-μm SiGe HBT Technology

We present the characterization of a Zero-bias Schottky diode-based Terahertz (THz) detector up to 5.56 THz. The detector was operated with both a table-top system until 1.2 THz and at a Free-Electron Laser (FEL) facility at singular frequencies from 1.9 to 5.56 THz. We used two measurement techniques in order to discriminate the sub-ns-scale (via a 20 GHz oscilloscope) and the ms-scale (using the lock-in technique) responsivity. While the lock-in measurements basically contain all rectification effects, the sub-ns-scale detection with the oscilloscope is not sensitive to slow bolometric effects caused by changes of the IV characteristic due to temperature. The noise equivalent power (NEP) is 10 pW/Hz in the frequency range from 0.2 to 0.6 THz and 17 pW/Hz at 1.2 THz and increases to 0.9 μW/Hz at 5.56 THz, which is at the state of the art for room temperature zero-bias Schottky diode-based THz detectors with non-resonant antennas. The voltage and current responsivity of ∼500 kV/W and ∼100 mA/W, respectively, is demonstrated over a frequency range of 0.2 to 1.2 THz with the table-top system.

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“…In ref. [ 39 ], e.g., the authors have reported a noise floor of 3 pW/

around 450 GHz. However, these detectors will not perform well over the large frequency range used in this paper.…”

Section: Results and Discussionmentioning

confidence: 99%

State-of-the-Art Room Temperature Operable Zero-Bias Schottky Diode-Based Terahertz Detector Up to 5.56 THz

Yadav

Ludwig

Faridi

et al. 2023

Sensors

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“…A direct detection scheme with an integrated antenna and associated baseband circuitry is a prominent solution for large and high-granularity THz cameras. Several antenna topologies are under investigation, such as ring antennas 57,58 or antennas with quartz superstrate/external silicon lenses. For the first prototype, a standard rectangular differential patch antenna was chosen, because of simple and scalable implementation and front-side irradiation.…”

Section: Terahertz Detector Technologiesmentioning

confidence: 99%

Advanced diagnostic detectors for rogue phenomena, single-shot applications

Caselle

Bielawski²,

Chilingaryan³

et al. 2023

Real-Time Measurements, Rogue Phenomena, and Single-Shot Applications VIII

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The detection of rapid dynamics in diverse physical systems is traditionally very difficult and strongly dominated by several noise contributions. Laser mode-locking, electron bunches in accelerators, and optical-triggered phases in materials are events that carry important information about the system from which they emerge. By detecting single-shot spectra with high repetition rates over long-time scales, new possibilities and applications to diagnose, control and tailor the spectral dynamics of lasers and electron beams in synchrotron and free-electron laser (FEL) accelerators open up. This contribution focuses on the latest developments of real-time, single-shot, highrepetition-rate detectors and data acquisition systems, with a special focus on emerging technologies and new possibilities in the diagnostics of rogue optical signals.

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“…However, in many advanced semiconductor processes high-quality Schottky diodes are unavailablesuch as the BiCMOS process used in this work. Bipolar transistors that are available in many semiconductor processes can also be utilized in detectors [42,43,44]. A power detector developed by Meyer [42] utilizes the non-linear rectifying behavior of the bipolar transistor.…”

Section: Power Detector For Millimeter-wave Applicationsmentioning

confidence: 99%

An E-band Bidirectional PALNA in 0.13 µm SiGe BiCMOS Technology

Ahamed

Varonen

Parveg

et al. 2022

2021 16th European Microwave Integrated Circuits Conference (EuMIC)

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I am very grateful to almighty Allah for giving me this opportunity and strength to finish this research. I wish to express my warmest gratitude to my parents for their endless support throughout my life. I am grateful to my parents-in-law for their good wishes. A lot of thanks to my little princess Aisha for bringing sunshine to my life during this difficult journey. Finally, I would like to thank my lovely wife Mst Tanzina Afrin. Without her support, I would never have been able to finish this work. I would like to dedicate this thesis to my family.

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A Broadband Dual-Polarized Terahertz Direct Detector in a 0.13-μm SiGe HBT Technology

Cited by 22 publications

References 10 publications

State-of-the-Art Room Temperature Operable Zero-Bias Schottky Diode-Based Terahertz Detector Up to 5.56 THz

State-of-the-Art Room Temperature Operable Zero-Bias Schottky Diode-Based Terahertz Detector Up to 5.56 THz

Advanced diagnostic detectors for rogue phenomena, single-shot applications

An E-band Bidirectional PALNA in 0.13 µm SiGe BiCMOS Technology

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