A Broadband GaN pHEMT Power Amplifier Using Non-Foster Matching

Lee, Sang‐Ho; Park, Hongjong; Choi, Kwangseok; Kwon, Youngwoo

doi:10.1109/tmtt.2015.2495106

Cited by 38 publications

(14 citation statements)

References 20 publications

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“…Broadband power amplifiers with high efficiency are key components employed widely in modern electric systems such as phased array radar and high-power electronic warfare systems [1][2][3]. The GaN HEMT, with high electron mobility and high breakdown voltage, has a higher output impedance, which brings many benefits for broadband matching.…”

Section: Introductionmentioning

confidence: 99%

An X-Band 40 W Power Amplifier GaN MMIC Design by Using Equivalent Output Impedance Model

Chen

Zhou

et al. 2019

Electronics

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This paper presents an X-band 40 W power amplifier with high efficiency based on 0.25 μm GaN HEMT (High Electron Mobility Transistor) on SiC process. An equivalent RC (Resistance Capacitance) model is presented to provide accurate large-signal output impedances of GaN HEMTs with arbitrary dimensions. By introducing the band-pass filter topology, broadband impedance matching networks are achieved based on the RC model, and the power amplifier MMIC (Monolithic Microwave Integrated Circuit) with enhanced bandwidth is realized. The measurement results show that this power amplifier at 28 V operation voltage achieved over 40 W output power, 44.7% power-added efficiency and 22 dB power gain from 8 GHz to 12 GHz. The total chip size is 3.20 mm × 3.45 mm.

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Section: Introductionmentioning

confidence: 99%

An X-Band 40 W Power Amplifier GaN MMIC Design by Using Equivalent Output Impedance Model

Chen

Zhou

et al. 2019

Electronics

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“…3 Non-Foster circuits are difficult to stabilize and have low efficiency. 4 Distributed amplifiers (DAs) are ideal for building ultra-wideband amplifiers. The source and drain artificial transmission lines of DAs absorb the input and output capacitance of the transistor, which reduce the bandwidth limitations produced by the capacitor.…”

Section: Introductionmentioning

confidence: 99%

“…Lossy matched amplifiers have a low efficency because of a certain loss of the matching network, and the bandwidth is limited . Non‐Foster circuits are difficult to stabilize and have low efficiency . Distributed amplifiers (DAs) are ideal for building ultra‐wideband amplifiers.…”

Section: Introductionmentioning

confidence: 99%

An ultra‐wideband distributed amplifier MMICs based on 0.15‐um GaAs pHEMT technology

Yang

Wang

et al. 2019

Int J Numerical Modelling

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A DC-30GHz ultra-wideband distributed amplifier based on the 0.15-um GaAs process is proposed and characterized. The distributed amplifier has nine power amplifying units with a cascode structure. The measured results show that the amplifier has 16-dB gain in the frequency range of DC-30GHz.The output power of 1-dB compression point is 19 dBm at 10 GHz, and the saturated output power is 25 dBm. The chip size is 3× 1.2 mm.

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“…In antennas design, Sussman-Fort [3] used nonFoster impedance matching to achieve the broadband electrically-small antenna, with a frequency is between 20-120 MHz. In power amplifier design, Sangho Lee [4] used NFC on interstage matching networks to increase the BW from 6-18 GHz. All of the literature describes that conventional NFC consumes power and is difficult to connect due to its pair of transistors and the loop between them required to operate the NFC.…”

Section: Introductionmentioning

confidence: 99%

Novel design of a 2.1–2.9 GHz negative capacitance using a passive non-Foster circuit

Seo

2017

IEICE Electron. Express

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Non-Foster circuits (NFC), in conjunction with the effect of negative impedance, have been applied to design broadband radio frequencies (RF) due to their wideband impedance matching ability. There are many approaches to designing non-Foster circuits that use transistors with loops inside to obtain negative reactance. Hence, conventional NFC has some problems, including complex connectivity and power consumption. In this paper, we analyse other properties of NFC phase and group delay, and we realize that these properties are related to properties of negative group delay (NGD) networks. Therefore, we proposed a new design of passive nonFoster circuits, that is less complicated and does not require power.

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A Broadband GaN pHEMT Power Amplifier Using Non-Foster Matching

Cited by 38 publications

References 20 publications

An X-Band 40 W Power Amplifier GaN MMIC Design by Using Equivalent Output Impedance Model

An X-Band 40 W Power Amplifier GaN MMIC Design by Using Equivalent Output Impedance Model

An ultra‐wideband distributed amplifier MMICs based on 0.15‐um GaAs pHEMT technology

Novel design of a 2.1–2.9 GHz negative capacitance using a passive non-Foster circuit

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