A broadband static frequency divider fabricated in a 165 GHz f t 0.8 µm InP DHBT process is described. Capacitive degeneration technique is adopted, extending the operating bandwidth with little increase in power consumption and area occupancy. The device characteristics are analyzed to achieve high device f t utilization. The chip occupies 0.484 mm×0.44 mm and consumes 380 mW from dual supplies of −2.5 V and −3.5 V. The measured input-referred self-oscillation frequency (SOF) is 56 GHz, and the output power locates in −5.87∼1.87 dBm. With single-ended sinewave input, the divider is operational in 2∼62 GHz, exhibiting a 0.36f t frequency range.