A broadband RLC matched GaN power amplifier using interposer‐MMIC technology

Abstract

In this article, we report a compact and low‐profile GaN‐based broadband power amplifier using silicon interposer‐MMIC (iMMIC) technology. The iMMIC technology enables a GaN HEMT to be embedded in the silicon substrate, and passive circuit elements such as metal‐insulator‐metal (MIM) capacitors, spiral inductors, and thin film resistors to be implemented on the high‐resistivity silicon (HRS) substrate using standard integrated passive device (IPD) process, so that the final power amplifier is almost indistinguishable from a single GaN MMIC power amplifier. The RLC matched all‐pass network and LC ladder type low‐pass network are employed as the input matching network and output matching network, respectively. The proposed power amplifier has a Psat of 39.1 to 39.2 dBm with a power‐added efficiency (PAE) of 40% to 50.5% in the frequency range of 2.1 to 3.5 GHz under continuous wave (CW) input signal. The proposed iMMIC power amplifier occupies only 9.9 mm2.

Design of a broadband GaN 12 W power amplifier

“…7 Proper matching techniques can also be used to extend bandwidth. [9][10][11][12] Fan et al adopted a matching technique to achieve maximum output power within a wide operating frequency range from 25 to 37 GHz. 9 Doherty PAs also have advantages in broadband.…”

“…Li et al have presented an improved distributed PA operating from 12 to 46 GHz, which achieved a maximum saturated output power of 20.9 dBm 7 . Proper matching techniques can also be used to extend bandwidth 9–12 . Fan et al adopted a matching technique to achieve maximum output power within a wide operating frequency range from 25 to 37 GHz 9 .…”