A Built-In-Test Scheme for Evaluating the Parameters of Floating-Gate MOS Transistors

Hou, An Sang

doi:10.1109/tim.2005.847338

Cited by 3 publications

(1 citation statement)

References 17 publications

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“…The next goal of this research is to consider the impact of long-term phenomena on these devices, such as aging and stress induced leakage current [5], [6], and to adapt the obtained results to the existing mathematical models of FGT design [7].…”

Section: Measurement Resultsmentioning

confidence: 99%

Experiments with Floating Gate Devices in 0.18 and 0.13 Micron CMOS Technologies

et al. 2006

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In this paper, we characterize the behaviour of floating gate devices on 0.18 and 0.13 micron technologies. Due to the thin oxide in the 0.18 micron devices, the floating gate devices cannot be used for long term storage, but may be applied in circuits where large time constants are needed. Our experiments show that discharge times are in the order of one hour and that the time depends on the area of devices connected to the floating gate. Experiments with thick oxide transistors with 0.13 micron technology show that the devices can be programmed using only positive voltages.

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Section: Measurement Resultsmentioning

confidence: 99%

Experiments with Floating Gate Devices in 0.18 and 0.13 Micron CMOS Technologies

et al. 2006

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A New Measurement Circuit to Evaluate Current Collapse Effect of GaN HEMTs Under Practical Conditions

Cao

Ansari

Kim

2015

IEEE Trans. Instrum. Meas.

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The gallium nitride transistors suffer from current collapse effect in operation regions, which leads the dynamic ON-resistance to increase when high voltage is applied to the transistor. Dynamic ON-resistance under practical application conditions is also an important factor for the reliability and conduction efficiency of transistors. To measure the dynamic ON-resistance and evaluate the current collapse effect, a softswitching circuit based on synchronous buck topology is proposed in this paper. To apply high-voltage and high-current stresses to the device without additional spikes and oscillation, resonance technique has been employed. As a result, the proposed circuit could produce sufficient power stresses to the devices with general equipment. To achieve accurate measurement of ON-resistance under switching operations and eliminate the saturation of oscilloscope probes, an active voltage clamp circuit is developed. Operation principles and design analysis of the circuit are described in this paper. The dynamic ON-resistance measurement method is illustrated in detail. Furthermore, a prototype circuit has been built. A simulation and experiments were carried out to verify the performance of the system. A comparison of the active clamp circuit with common voltage probes is presented through the measurement results. The experimental results confirm that dynamic ON-resistance can be accurately measured using the proposed circuit and the current collapse effect can be evaluated under practical operation conditions with high precision.

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Accurate Nanopower Supply-Insensitive CMOS Unit Vth Extractor and αVth Extractor with Continuous Variety

Wang

Ding

et al. 2017

IEICE Trans. Fundamentals

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A Built-In-Test Scheme for Evaluating the Parameters of Floating-Gate MOS Transistors

Cited by 3 publications

References 17 publications

Experiments with Floating Gate Devices in 0.18 and 0.13 Micron CMOS Technologies

Experiments with Floating Gate Devices in 0.18 and 0.13 Micron CMOS Technologies

A New Measurement Circuit to Evaluate Current Collapse Effect of GaN HEMTs Under Practical Conditions

Accurate Nanopower Supply-Insensitive CMOS Unit <i>V<sub>th</sub></i> Extractor and <i>αV<sub>th</sub></i> Extractor with Continuous Variety

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