A Capacitor-less LDO with Nested Miller Compensation and Bulk-Driven Techniques in 90nm CMOS

Zhang, Ruitong; Liu, Zicheng; Wang, Xinghua

doi:10.1109/iccss51193.2021.9464211

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2023

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“…For portable electronics to be ultra-low-power always-on, a low-dropout (LDO) regulator must be used to reduce quiescent current and supply voltage [1] [2]. Analog LDO performs well in terms of anti-noise and transient response [3] [4]. However, it has difficulty in operating at sub/near-threshold supply voltages [5] and usually requires complex frequency compensation [6].…”

Section: Introductionmentioning

confidence: 99%

A 540-mA, 0.0487-ps-FOM Digital LDO based on Bi-directional Binary Search with Dual-loop Control

Chen,

Chen

et al. 2023

J. Phys.: Conf. Ser.

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A dual-loop digital low-dropout regulator based on the bi-directional binary search method is implemented in a 0.18-μm CMOS process in this paper. To improve the transient response, a bi-directional successive approximation register without initialization is proposed in coarse loop. To speed up fine adjustment during heavy loads, a two-dimensional MOSFET array is adopted to improve fine regulation step. Simulation results demonstrate that, during load current steps between 540 mA and 40 mA, the undershoot/overshoot is 364 mV/161 mV, and the digital LDO settles within 210 ns. For a supply voltage of 1.4 V with 200 mV dropout, the current efficiency is as high as 99.99% and the figure of merit is as low as 0.0487 ps.

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