2020
DOI: 10.1002/slct.202003921
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A Centrifugal‐Force‐Assisted Wet‐Etching Approach toward Top‐Down Fabrication of Perovskite‐Single‐Crystalline Thin Films

Abstract: Organic‐inorganic hybrid halide perovskite‐single‐crystalline thin films with high quality are promising for making high‐performance optoelectronic devices, but their fabrication is still challenging, particularly for the top‐down fabrication. Here, a facile centrifugal‐force‐assisted wet‐etching strategy is used in fabricating hybrid perovskite‐single‐crystalline thin film from its single‐crystalline wafer. The film thickness can be reduced to less than 20 micrometres and the film remains high quality and fla… Show more

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Cited by 4 publications
(4 citation statements)
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“…Reproduced with permission. [56] Copyright 2020, John Wiley and Sons. c) Reproduced with permission.…”
Section: Space-confined Methodsmentioning
confidence: 99%
See 2 more Smart Citations
“…Reproduced with permission. [56] Copyright 2020, John Wiley and Sons. c) Reproduced with permission.…”
Section: Space-confined Methodsmentioning
confidence: 99%
“…[ 55 ] This method was further modified by Lv and Zhang to reduce residues on the crystal surface after the wet etching process. [ 56 ] As schematically illustrated in Figure 4c, the process involved first thinning the bulk MAPbI 3 single crystal to approximately 200 μm‐thick wafers through wire cutting. Subsequently, the crystal wafer was etched with a low‐concertation mother liquor to prevent undesired crystallization on the surface.…”
Section: Large‐scale Single Crystal Synthesis Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…[91] Micro-crystalline precipitation as a consequence of etching was shown to be prevented by placing SC on a rotating stand to spread the etching solution uniformly on the SC wafer while removing rapidly the residual etching solution from the surface. [92] Alternatively, sandpaper was used to thin down MAPI and MAPB bulk crystals grown by ITC, followed by additional lapping with calcined alumina sheets to reduce surface roughness down to 0.3 μm (Figure 7b). [93] The top down approach is a general method for preparing thin films of controllable thickness and orientation, allowing to expose other facets than the (100) typically obtained by the SLG technique.…”
Section: Free-standing Thin Filmsmentioning
confidence: 99%