A Charge Collection Equivalent Method for Laser Simulation of Dose Rate Effects With Improved Performance

Tang, Ge; Li, Mo; Sun, Peng; Wang, Lei; Peng, Kexin; Zhang, Jian; Feng, Peng; Wei, Biao

doi:10.1109/tns.2021.3073700

Cited by 5 publications

(1 citation statement)

References 26 publications

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“…In previous work, the effectiveness of laser simulation dose rate effects has been verified [31,32], as well as for neutron irradiated NPN transistors [33]. The laser simulation of neutron irradiated NPN transistors is essentially a step-by-step characterization method, and unable to characterize transient SEs of devices.…”

Section: Characterization Methods For Transient Sementioning

confidence: 98%

Transient synergistic damage mechanism and characterization of silicon bipolar junction transistor

Tang,

Zhang,

Xiao

et al. 2024

J. Phys. D: Appl. Phys.

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The Silicon bipolar junction transistor (Si BJT) is widely used as a discrete device, but it's susceptible to damage from both ionization and displacement in nuclear radiation environments. Current research primarily focuses on steady-state irradiation to study the synergistic damage mechanism caused by ionization and displacement, with a lack of research on transient synergistic damage. This paper studies the energy deposition and distribution with different incident angles and energies when neutrons and photons are simultaneously incident, and found similarities in the energy deposition between low-energy photons and 1 MeV neutrons as well as high-energy photons and 1 MeV neutrons in synergistic damage. Additionally, transient current under simultaneous neutron and photon irradiation was calculated using COMSOL software. Simulation results indicate that by adjusting the number of photons, it is feasible to simulate the transient electrical characteristics of high-energy photons utilizing low-energy photons for synergistic damage. Hence, a novel characterization method, combining laser simulation and neutron sources, is developed to test the transient electrical characteristics of Si BJT with synergistic damage.

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Section: Characterization Methods For Transient Sementioning

confidence: 98%

Transient synergistic damage mechanism and characterization of silicon bipolar junction transistor

Tang,

Zhang,

Xiao

et al. 2024

J. Phys. D: Appl. Phys.

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Feasibility and equivalence analysis of transient dose rate effect simulation by pulsed laser in level-shifting transceiver and TCAD simulation on its ESD circuits

Guo

Peng

et al. 2023

AIP Advances

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Compared to linear accelerators, pulsed lasers have the characteristics of high efficiency, low cost, stable pulse output, and low environment interference for researching the transient dose rate effect (TDRE) on semiconductor devices. In this paper, pulsed laser radiation experiments are performed on a level-shifting transceiver. The experimental results are consistent with the results of the transient γ-ray radiation experiment, demonstrating the feasibility of using the pulsed laser in TDRE research on the level-shifting transceiver. This paper obtains theoretical and experimental conversion factors (CFs) through theoretical analysis and equivalency of the peak photocurrents, which are measured in pulsed laser and transient γ-ray radiation experiments. The CF results from the two approaches are within 7% of each other. In pulsed laser radiation experiments, an uncommon phenomenon is found. At the I/O (Input/Output) ports of the level-shifting transceiver, a trend of a positive photocurrent followed by a negative pulse is observed. A hypothesis is proposed that this photocurrent is produced by the turn-on and turn-off of the parasitic PNP (Positive-Negative-Positive) transistors in electrostatic discharge circuits at the level-shifting transceiver I/O ports. In addition, this hypothesis is verified by TCAD (Technology Computer Aided Design) simulations.

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Transient dose rate effects in silicon–germanium heterojunction bipolar transistors

Li,

Dong,

Guo

et al. 2023

AIP Advances

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Transient γ-radiation and laser-simulated experiments were carried out to investigate the transient dose rate effect (TDRE) in SiGe heterojunction bipolar transistors (HBTs) for the first time. The results indicate that IBM43RF0100 SiGe HBTs experience a significant sensitivity of TDRE. For the laser-simulated experiment, the duration of transient current and charge collection are matched well with that of transient γ-radiation. The amplitude of transient photocurrent induced by the lower energy order of μJ approaches the transient photocurrent induced by transient γ-radiation. It is demonstrated that laser-simulated experiments are a candidate and a convenient method to evaluate the TDRE response of SiGe HBTs, which avoids serious electromagnetic interference in the transient γ-radiation environment.

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A Charge Collection Equivalent Method for Laser Simulation of Dose Rate Effects With Improved Performance

Cited by 5 publications

References 26 publications

Transient synergistic damage mechanism and characterization of silicon bipolar junction transistor

Transient synergistic damage mechanism and characterization of silicon bipolar junction transistor

Feasibility and equivalence analysis of transient dose rate effect simulation by pulsed laser in level-shifting transceiver and TCAD simulation on its ESD circuits

Transient dose rate effects in silicon–germanium heterojunction bipolar transistors

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