A Charge-oriented Model For MOS Transistor Capacitances

Ward, D.E.; Dutton, R.W.

doi:10.1109/acssc.1977.729472

Cited by 28 publications

(48 citation statements)

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“…However, in many models developed so far, the requirement (3.1) is violated -because it implies additional restrictions on the capacitor model for real circuit devices, which is difficult to develop anyway. A well known counterexample is the model of Meyer for MOS capacitances, which has been discussed extensively in the literature, since it has been found that it violates the charge conservation requirement [167,210,253]. See [98] for more details.…”

Section: ∂C ∂V Vdvmentioning

confidence: 99%

“…As a more flexible and universal approach a charge/flux-oriented formulation can be taken for energy storing elements which reflects better the underlying physics of the circuit devices, see e. g. Calahan [31], Chua and Lin [38], Ward and Dutton [253]. It requires the inclusion of terminal charges q and branch fluxes φ into the set of network variables.…”

Section: Principles and Basic Equationsmentioning

confidence: 99%

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Modelling and Discretization of Circuit Problems

Günther

Feldmann

Maten

2005

Handbook of Numerical Analysis

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Section: ∂C ∂V Vdvmentioning

confidence: 99%

Section: Principles and Basic Equationsmentioning

confidence: 99%

Modelling and Discretization of Circuit Problems

Günther

Feldmann

Maten

2005

Handbook of Numerical Analysis

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“…The charges will be canceled due to the differential nature of the structure; since, it is a common mode voltage. The other important factor is that simulation software, like SPICE, do not give accurate results for charge injection simulations [18]- [22]. This inaccuracy occurs due to the incorrect modeling of the MOS transistor intrinsic charges.…”

Section: Switches and Their Non-ideal Effectsmentioning

confidence: 99%

Low Noise Pre-amplifier/Amplifier Chain for High Capacitance Sensors

Adl

Peckerar

2007

2007 IEEE Sensors Applications Symposium

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In the past two decades, imaging sensors and detectors have developed tremendously. This technology has found its way into a number of areas, such as space missions, synchrotron light sources, and medical imaging. Nowadays, detectors and custom ICs are routine in high-energy physics applications. Electronic readout circuits have become a key part of every modern detector system. Many sensing circuits in detectors depend upon accumulating charge on a capacitor. The charge uncertainty on the capacitor when it is reset causes a signal error known as reset noise. Therefore, low noise readout circuitry capable of driving high input capacitance is essential for detector systems.A low noise pre-amplifier/amplifier readout circuitry has been designed and fabricated in 0.13 m µ IBM CMOS8RF process technology. The pre-amplifier/ amplifier chain employs correlated double sampling at the input to suppress the kTC noise without any additional circuitry. In order to increase the signal-to-noise ratio, capacitive matching is used at the amplifier input. The experimental results of the signal processing chain employing capacitive matching and correlated double sampling show more than 60 times improvement in the signal-to-noise ratio over the same circuit without these improvements.In this dissertation a novel auto-zeroing technique is introduced as well. This technique uses a nulling point other than the amplifier's input and output to perform the auto-zeroing operation. The auto-zeroing is performed by taking advantage of emitter degeneration in the input transistor pair of the differential pair. For testing purposes this technique is implemented on a telescopic cascode differential amplifier.The auto-zeroed telescopic cascode differential amplifier has also been designed and fabricated in 0.13 m µ IBM CMOS8RF process technology. This auto-zeroing technique reduces the input referred offset noise by an order of magnitude. LOW NOISE PRE-AMPLIFIER/AMPLIFIER CHAIN FOR HIGH CAPACITANCESENSORS.

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“…Q D calculated using Ward's channel charge partitioning scheme [14] where Tol Q is the total inversion charge and ox Q is the total oxide fixed charge at the oxide-silicon interface and can be neglected. For short channel devices resistance R i [15] is given as…”

Section: Analytical Modelingmentioning

confidence: 99%

An Accurate Small Signal Modeling of Cylindrical/Surrounded Gate MOSFET for High Frequency Applications

Ghosh¹,

Haldar²,

Gupta³

et al. 2012

JSTS:Journal of Semiconductor Technology and Science

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Abstract-An intrinsic small signal equivalent circuit model of Cylindrical/Surrounded gate MOSFET is proposed. Admittance parameters of the device are extracted from circuit analysis and intrinsic circuit elements are presented in terms of real and imaginary parts of the admittance parameters. S parameters are then evaluated and justified with the simulated data extracted from 3D device simulation.

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A Charge-oriented Model For MOS Transistor Capacitances

Cited by 28 publications

References 1 publication

Modelling and Discretization of Circuit Problems

Modelling and Discretization of Circuit Problems

Low Noise Pre-amplifier/Amplifier Chain for High Capacitance Sensors

An Accurate Small Signal Modeling of Cylindrical/Surrounded Gate MOSFET for High Frequency Applications

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