A chemical mechanical polishing model incorporating both the chemical and mechanical effects

Qin, Kuide; Moudgil, Brij M.; Park, Chang-Won

doi:10.1016/j.tsf.2003.09.060

Cited by 163 publications

(87 citation statements)

References 22 publications

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“…Two sides in contact with abrasive particles were symmetrical about the X-Y plane. Three sizes of abrasive particle (8,10, and 14 µm) were used in the simulation. A fully four-node linear tetrahedron (C3D4 element type) element type was applied to the abrasive particle.…”

Section: A Simulation Modelmentioning

confidence: 99%

“…9 Park et al made use of a CMP model by incorporating both chemical and mechanical effects. 10 This model described the influence of slurry characteristics, pad properties, and processing conditions in the CMP process and explained the material removal mechanism. Zhang et al explained the chemical effect on the material removal rate (MRR) processing of silicon specimens by means of regulating the chemical reagents' parameters.…”

Section: Introductionmentioning

confidence: 99%

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Research on influences of contact force in chemical mechanical polishing (CMP) process

et al. 2014

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A series of simulations of chemical mechanical polishing (CMP) were conducted to investigate the contact force between abrasive particles and specimens by using the finite element method (FEM). In this paper, a micro-contact model, which only involves the mechanical interactions, was set up to simulate the polishing process by changing the processing parameters, including the downward pressure, abrasive size, and polishing speed. Simulation results show that the contact force becomes larger when the downward pressure increases. In addition, when the downward pressure and abrasive size increase, the fluctuation of the contact force becomes large, whereas it declines with decreases in the polishing speed. In addition, corresponding CMP experiments were done to investigate the material removal rate (MRR) and polished average roughness (Ra) under different simulation conditions. Through the establishment of the contact force properties in the simulation and the MRR and Ra in the CMP experiment, qualitative research has been done on the relationship between the contact force in the simulation and experimental results. Experimental results indicate that the MRR and surface roughness are influenced by the contact force. A high MRR can be obtained by a large contact force and dramatic fluctuations can lead to poor surface-finish quality. The investigation contributes to obtaining higher polishing efficiency and lower surface roughness through optimization of the polishing parameters.

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Section: A Simulation Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Research on influences of contact force in chemical mechanical polishing (CMP) process

et al. 2014

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“…However, these models did not consider the effect of pad surface roughness (asperity height distribution) on polishing removal rate. There are quite a few other publications considering the effect of pad roughness and other pad properties on polishing removal rate [21,[47][48][49][50][51][52][53][54].…”

Section: Review Of Modeling Of Pad Effects On Polishing Performancementioning

confidence: 99%

Pads for IC CMP

Wang

Paul

Kobayashi

et al. 2007

Microelectronic Applications of Chemical Mechanical Planarization

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The chemical-mechanical polishing or planarization (CMP) process is a complex interplay between the wafer and the consumables involved. The consumables include slurry, pad, conditioner, and so on. During polishing, the pad carries the slurry and delivers it to the wafer surface. It also transmits the normal and shear forces from the polisher to the wafer. Therefore, polishing pad plays a critical role in the CMP process and influences the outcomes such as material removal rate (MRR), within-wafer nonuniformity (WIWNU), wafer-to-wafer nonuniformity (WTWNU), step height reduction efficiency (SHRE), and defect counts.As the CMP process is a combination of mechanical and chemical processes, the polishing pad has to endure repeated mechanical stress and constant chemical attacks. The applied downforce and polishing-induced friction force cause various levels of compression and abrasion. Slurry components such as oxidizers and acids can react with different components of the pads. Thus the polishing pad must have sufficient mechanical integrity and chemical resistance to survive the rigors of polishing. Polishing pads must balance the needs of hardness, modulus for planarity, and strength to resist wear and tear during polishing. Pads must also be able to survive the aggressive slurry chemistry used in CMP polishing without degrading, delaminating, blistering, or warping, since CMP slurries for the polishing of interlevel dielectric (ILD) oxide layers are usually highly alkaline with pH as high as 11, and CMP slurries for the polishing of metal films are highly acidic Microelectronic Applications of Chemical Mechanical Planarization, Edited by Yuzhuo Li

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“…The pad serves as an abrasion support substrate to facilitate mechanical removal. The slurry is used to chemically soften the wafer surface to facilitate the material removal (2,3).…”

Section: Introductionmentioning

confidence: 99%

Tuning the Removal Rate of Carbon Doped Oxide during Chemical Mechanical Polishing

Liu¹,

Bian²

2007

ECS Trans.

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Most integration schemes require CMP barrier slurries to have high SiO 2 and tunable carbon doped oxide (CDO) removal rates (RR). An additive, T, is able to enhance the SiO 2 rate at low pH, but greatly suppressed the CDO RR at the concentration providing maximum SiO 2 RR. With the addition of another additive, Z or P, the CDO rate could be tuned upward while not affecting the SiO 2 RR substantially. Additives Z and P are anionic surfactants with short to intermediate chain length. They are effective only in the presence of T, which suggests a synergistic effect between the additives. Contact angle studies and SIMS analysis indicate that in the presence of T, Z was adsorbed only on SiO 2 , but not on CDO. Without T in the slurry, Z could not be adsorbed on either film. It was proposed that the adsorption of Z onto silica abrasive made the colloidal silica particle more hydrophobic, leading to greatly enhanced impact on the hydrophobic CDO surface.

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A chemical mechanical polishing model incorporating both the chemical and mechanical effects

Cited by 163 publications

References 22 publications

Research on influences of contact force in chemical mechanical polishing (CMP) process

Research on influences of contact force in chemical mechanical polishing (CMP) process

Pads for IC CMP

Tuning the Removal Rate of Carbon Doped Oxide during Chemical Mechanical Polishing

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