A chemically treated IGZO-based highly visible-blind UV phototransistor with suppression of the persistent photoconductivity effect

Kim, Min Gye; Jeong, Jun Hyung; Ma, Jin Hyun; Park, Min Ho; Kim, Seunghwan; Park, Soohyung; Kang, Seong Jun

doi:10.1039/d3tc02756b

Cited by 4 publications

(2 citation statements)

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“…(PPC) effect [23,45]. Moreover, Figure 5c,d shows the rising time, falling time, and power consumption of periodic photoresponse at wavelengths of 520 and 450 nm, respectively.…”

Section: M-o [%] V O [%] M-oh [%]mentioning

confidence: 97%

“…The illumination conditions were set at a light power density of 4.5 mW cm −2 and a frequency of 1 Hz. The IGZO/IZO(8:2) transistor effectively operates even at a low V D value of 0.5 V without the persistent photocurrent (PPC) effect [23,45]. Moreover, Figure 5c,d shows the rising time, falling time, and power consumption of periodic photoresponse at wavelengths of 520 and 450 nm, respectively.…”

Section: M-o [%] V O [%] M-oh [%]mentioning

confidence: 98%

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Low-Power Phototransistor with Enhanced Visible-Light Photoresponse and Electrical Performances Using an IGZO/IZO Heterostructure

Kim,

Jeong,

Park

et al. 2024

Materials

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In this study, we demonstrated the effective separation of charge carriers within the IGZO/IZO heterostructure by incorporating IZO. We have chosen IGZO for its high mobility and excellent on–off switching behavior in the front channel of our oxide–oxide heterostructure. Similarly, for an additional oxide layer, we have selected IZO due to its outstanding electrical properties. The optimized optoelectronic characteristics of the IGZO/IZO phototransistors were identified by adjusting the ratio of In:Zn in the IZO layer. As a result, the most remarkable traits were observed at the ratio of In:Zn = 8:2. Compared to the IGZO single-layer phototransistor, the IGZO/IZO(8:2) phototransistor showed improved photoresponse characteristics, with photosensitivity and photoresponsivity values of 1.00 × 107 and 89.1 AW−1, respectively, under visible light wavelength illumination. Moreover, the electrical characteristics of the IGZO/IZO(8:2) transistor, such as field effect mobility (μsat) and current on/off ratio (Ion/Ioff), were highly enhanced compared to the IGZO transistor. The μsat and Ion/Ioff were increased by about 2.1 times and 2.3 times, respectively, compared to the IGZO transistor. This work provides an approach for fabricating visible-light phototransistors with elevated optoelectronic properties and low power consumption based on an oxide–oxide heterostructure. The phototransistor with improved performance can be applied to applications such as color-selective visible-light image sensors and biometric sensors interacting with human–machine interfaces.

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“…(PPC) effect [23,45]. Moreover, Figure 5c,d shows the rising time, falling time, and power consumption of periodic photoresponse at wavelengths of 520 and 450 nm, respectively.…”

Section: M-o [%] V O [%] M-oh [%]mentioning

confidence: 97%

Section: M-o [%] V O [%] M-oh [%]mentioning

confidence: 98%

Low-Power Phototransistor with Enhanced Visible-Light Photoresponse and Electrical Performances Using an IGZO/IZO Heterostructure

Kim,

Jeong,

Park

et al. 2024

Materials

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High Rejection‐Ratio IGZO Ultraviolet Phototransistor via Additional Solution Processed ZnO Absorption Layer

Ma,

Jeong,

Kang

et al. 2024

Advanced Optical Materials

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The depletion of the ozone layer over the last four decades has increased Earth's exposure to ultraviolet (UV) radiation, posing significant health risks. Indium‐Gallium‐Zinc‐Oxide (IGZO) phototransistors have emerged as promising UV detection candidates, boasting a wide bandgap (>3 eV), low off‐current, high on‐current, and stability. However, previous efforts to enhance the photoresponse of IGZO phototransistors focused on visible light absorption layers, neglecting UV detection. Here, zinc oxide (ZnO) nanoparticles (NPs) as an absorption layer in IGZO TFTs for UV phototransistors are introduced. IGZO/ZnO TFTs exhibit robust photoresponsivity for UV light below 360 nm, showcasing rejection ratios (Ruv / Rvis) of 20 258, 62 261, 193 649, and 401 582 for wavelengths of 360, 340, 320, and 300 nm, respectively. The combination of IGZO's wide bandgap with ZnO NPs proves effective for detecting UV light below 360 nm, even at low incident light intensities (15 µW cm−2). Enhanced photoresponse characteristics are confirmed via ultraviolet photoelectron spectroscopy. This research highlights the potential of IGZO materials for UV phototransistors and introduces a novel perspective on the utilization of an additional absorption layer traditionally employed for the conventional extension into the visible light range.

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Light‐to‐Spike Encoding Using Indium‐Gallium‐Zinc Oxide Phototransistor for all‐Color Image Recognition with Dynamic Range and Precision Tunability

Huang,

Chen,

Chen

et al. 2024

Small Methods

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To enhance the efficiency of machine vision system, physical hardware capable of sensing and encoding is essential. However, sensing and encoding color information has been overlooked. Therefore, this work utilizes an indium‐gallium‐zinc oxide (IGZO) phototransistor to detect varying densities of red, green, and blue (RGB) light, converting them into corresponding drain current (ID) states. By applying stochastic gate voltage (VG) pulses to the IGZO phototransistor, the fluctuations are generated in these ID states. When the ID exceeds the threshold current (ITC), a spike signal is generated. This approach enables the conversion of light densities into spike signals, achieving spike‐rate encoding. Moreover, adjusting the standard deviation (σ) of the VG pulses controls the range of light densities converted into spike rates, while altering the mean (μ) of the VG pulses changes the baseline level of spike rates. Remarkably, separate RGB channels offer a tunable encoding process, which can emphasize individual colors and correct color bias. The encoded spike rates are also fed into a spiking neural network (SNN) for CIFAR‐10 pattern recognition, achieving an accuracy of 86%. The method allows the operation of SNN and shows the tunability in the process of light‐to‐spike encoding, opening possibilities for color image processing.

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A chemically treated IGZO-based highly visible-blind UV phototransistor with suppression of the persistent photoconductivity effect

Abstract: In the past few years, there has been a growing interest in ultraviolet (UV) photodetectors for various applications. A key requirement for UV photodetectors is the ability to exclusively detect...

Cited by 4 publications

References 89 publications

Low-Power Phototransistor with Enhanced Visible-Light Photoresponse and Electrical Performances Using an IGZO/IZO Heterostructure

Low-Power Phototransistor with Enhanced Visible-Light Photoresponse and Electrical Performances Using an IGZO/IZO Heterostructure

High Rejection‐Ratio IGZO Ultraviolet Phototransistor via Additional Solution Processed ZnO Absorption Layer

Light‐to‐Spike Encoding Using Indium‐Gallium‐Zinc Oxide Phototransistor for all‐Color Image Recognition with Dynamic Range and Precision Tunability

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