A circuit model for nonlinear simulation of radio-frequency filters using bulk acoustic wave resonators

Ueda, Masahiko; Iwaki, Masafumi; Nishihara, Tokihiro; Satoh, Y.; Hashimoto, Ken–ya

doi:10.1109/tuffc.2008.719

Cited by 39 publications

(27 citation statements)

References 13 publications

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“…For example, Collado developed a physical model based on the stress dependence of the bulk modulus [1,2]. Ueda developed a model based on strain and electric field dependence of the displacement vector [3,4], and Feld developed a physical model based on a strain dependent piezoelectric constant [5].…”

Section: Nonlinearity; Second Harmonic; Intermodulation Distortion; Pmentioning

confidence: 99%

Determination of the nonlinear physical constants in a piezoelectric AlN film

Feld

Shim

2010

2010 IEEE International Ultrasonics Symposium

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Recent models vary widely as to the mechanism in the piezoelectric AlN film that gives rise to the measured 2 nd and 3 rd order nonlinear behavior in BAW resonators. As an example one model suggests that a strain dependence of the bulk modulus in a piezoelectric AlN film is responsible for both the 2nd and 3rd order response of BAW and FBAR resonators [Collado]. We call this model the "bulk-bulk" model since the bulk modulus depends on the strain in each order respectively. We find that this "bulk-bulk" model is not capable of modeling our measured second harmonic (H2), and intermodulation distortion (IMD3) data simultaneously. When the 2nd order coefficient is chosen to match the measured 2nd harmonic response, it generates an IMD3 response through a process of remixing at a frequency 2F 1 -F 0 which is larger than our measured data by ~45 dBs when two +24 dBm tones are applied. It appears the authors did not fully incorporate their chosen non-linearity into their model. As a result the "bulk-bulk" non-linear model of the AlN film must be abandoned in favor of a new model --a "general" nonlinear Mason model, in which a complete set of 2nd and 3rd order nonlinear mechanisms can be evaluated to see which are consistent with the data. Such a model is described in this work and in a companion paper. Using this model we show that a strain dependent piezoelectric coefficient must be employed to model the H2 behavior without modeling an IMD3 response that is much larger than what is measured. To fit the IMD3 data a 3rd order strain dependent bulk modulus must also be incorporated. The resulting model is a "piezo-bulk" model for suggesting that the piezo coefficient and the bulk modulus have a 2nd and 3rd order dependence on strain, respectively. We also show that another recent model [Ueda] is not suitable for evaluating the underlying nonlinear physics because it violates conservation of energy and does not allow for remixing.

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Section: Nonlinearity; Second Harmonic; Intermodulation Distortion; Pmentioning

confidence: 99%

Determination of the nonlinear physical constants in a piezoelectric AlN film

Feld

Shim

2010

2010 IEEE International Ultrasonics Symposium

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“…These sources may be drawn together in a unique term in (3) which depends on the stress as (9) This function models the piezoelectric stress-strain curve, which for weak nonlinearities can be expanded in a Taylor's series as (10) where account for the strength of the nonlinear effects.…”

Section: B Nonlinear Klm Modelmentioning

confidence: 99%

“…Thereafter, other works [5]- [9] used lumped approaches based in Tiersten's equations or in nonlinear versions of the Butterworthvan-Dike equivalent circuit (BVD) [10] in which one or several lumped elements of the acoustic branch (series circuit) are nonlinear. Some of our previous work [11] also uses a phenomenological approach based on the BVD circuit to model the IMD occurring in a film bulk acoustic resonator (FBAR).…”

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confidence: 99%

Nonlinear Distributed Model for Bulk Acoustic Wave Resonators

Collado

Rocas

Mateu

et al. 2009

IEEE Trans. Microwave Theory Techn.

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“…Although these models can be useful because of their simplicity, they are mainly limited to narrow-band operation and they usually cannot be parameterized in terms of device-independent parameters (Constantinescu et al, 2008). Another approach consists of extending all the material properties on the constitutive equations to the nonlinear domain and introducing the nonlinear relations to the model implementation, which leads to several possible nonlinear sources increasing model complexity (Cho et al, 1993;Ueda et al, 2008). On the other hand, (Feld, 2009) presents a one-parameter nonlinear circuit model to account for the intrinsic nonlinearities.…”

Section: Introductionmentioning

confidence: 99%