A CMOS-Based ISFET Chemical Imager With Auto-Calibration Capability

Goh, Carolyn; Georgiou, Pantelis; Constandinou, Timothy G.; Prodromakis, Themis; Toumazou, C.

doi:10.1109/jsen.2011.2155644

Cited by 47 publications

(16 citation statements)

References 20 publications

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“…The target system is a two tier system consisting of a processing tier and a sensing tier implemented, respectively, in a 65 nm [17] and a 0.35 µm technology [18]. The choice of the 0.35 µm technology is due to the typical use of this technology for sensing circuits [18,19]. Older and therefore lower cost technologies are preferred for sensing applications since speed is not a critical requirement.…”

Section: Introductionmentioning

confidence: 99%

Contactless Heterogeneous 3-D ICs for Smart Sensing Systems

Papistas

Pavlidis

2018

Integration

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A heterogeneous contactless transceiver circuit is designed to provide inter-tier signalling for a 3-D system considering specific bonding constraints. The system is composed of two tiers, a 65 nm processing tier and a 0.35 µm sensing tier. Face-to-back integration is chosen to support fluidic sensing. Half duplex communication between the tiers is provided through inductive links. Each tier is considered to be fabricated in a different technology to enable low manufacturing cost and benefit from the advantages each technology offers. Both the uplink and downlink transceivers achieve data rates that reach 1 Gbps with non-return-to-zero data encoding. Energy efficiency is the predominant objective, with the uplink dissipating 5.28 pJ/b and 8.67 pJ/b for the downlink. A 6.8× power reduction is demonstrated when using heterogeneous technologies, compared to a state-of-the-art 0.35 µm transceiver, while the dissipated energy is decreased by 37.5% as compared to a state-of-the-art 65 nm transceiver. Process variation analysis is also performed to ensure the proposed circuit operates correctly across several process corners, covering a broad design space. To improve system robustness, an overhead of 2.3% on the peak power and < 1% on the average power is shown, respectively.

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Section: Introductionmentioning

confidence: 99%

Contactless Heterogeneous 3-D ICs for Smart Sensing Systems

Papistas

Pavlidis

2018

Integration

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“…and i α and β are the scaling factors. Substituting Equation 7into Equation (19) and then into Equation (18) results in:…”

Section: Differential Sensingmentioning

confidence: 99%

“…In the aforementioned literature, either the single-point or the two-point calibration method is used to adjust the attribute of the temperature sensor. In addition to these conventional calibration approaches, researchers have also proposed methods such as self-calibration [15,16] and/or auto-calibration [17][18][19], to further reduce the complexity of the post fabrication calibration process.…”

Section: Introductionmentioning

confidence: 99%

A 40 nW CMOS-Based Temperature Sensor with Calibration Free Inaccuracy within ±0.6 °C

Chouhan

Halonen

2019

Electronics

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In this study, a temperature equivalent voltage signal was obtained by subtracting output voltages received from two individual temperature sensors. These sensors work in the subthreshold region and generate the output voltage signals that are proportional and complementary to the temperature. Over the temperature range of −40 ∘C to +85 ∘C without using any calibration method, absolute temperature inaccuracy less than ±0.6 ∘C was attained from the measurement of five prototypes of the proposed temperature sensor. The implementation was done in a standard 0.18 μ m CMOS technology with a total area of 0.0018 mm 2. The total power consumption is 40 nW for a supply voltage of 1.2 V measured at room temperature.

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“…Homogeneous inductive links have been demonstrated in both of these technologies, where the most advanced manufacturing process for a prototype inductive link is a 65 nm technology [18]. The choice of the 0.35 µm technology is due to the typical use of this technology for sensing circuits [19], [20]. In addition, these homogeneous links serve as a baseline for comparison.…”

Section: Introductionmentioning

confidence: 99%

Contactless inter-tier communication for heterogeneous 3-D ICs

Papistas

Pavlidis

2017

2017 IEEE International Symposium on Circuits and Systems (ISCAS)

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A heterogeneous contactless transceiver circuit is designed to provide half duplex communication for a 3-D system considering specific bonding constraints. The system is composed of two tiers and is integrated face-to-back to support fluidic sensing. Communication between the tiers is achieved through inductive links. Each tier is considered to be fabricated in a different technology node to enable low manufacturing cost and benefit from the advantages each technology offers. Both the uplink and downlink transceivers achieve data rates that reach 1 Gbps with non-return-to-zero data encoding. Energy efficiency is the primary objective, with the uplink dissipating 4.93 mW and the downlink 10.53 mW. A 5.2× power reduction is achieved when using heterogeneous technologies, compared to a stateof-the-art 0.35 µm transceiver, while the dissipated energy is decreased by 34% as compared to a state-of-the-art 65 nm transceiver.

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A CMOS-Based ISFET Chemical Imager With Auto-Calibration Capability

Cited by 47 publications

References 20 publications

Contactless Heterogeneous 3-D ICs for Smart Sensing Systems

Contactless Heterogeneous 3-D ICs for Smart Sensing Systems

A 40 nW CMOS-Based Temperature Sensor with Calibration Free Inaccuracy within ±0.6 °C

Contactless inter-tier communication for heterogeneous 3-D ICs

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