2017
DOI: 10.1088/0256-307x/34/2/025101
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A CMOS Compatible MEMS Pirani Vacuum Gauge with Monocrystal Silicon Heaters and Heat Sinks

Abstract: We present a micro-Pirani vacuum gauge using the low-resistivity monocrystal silicon as the heaters and heat sinks fabricated by the post complementary metal oxide semiconductor (CMOS) microelectromechanical system (MEMS) process. The metal interconnection of the device is fabricated by a 0.5 μm standard CMOS process on 8-inch silicon wafer. Then, a –Si low-temperature fusion bonding is developed to bond the CMOS wafer and the MEMS wafer, with the electrical connection realized by the tungsten through silicon… Show more

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Cited by 13 publications
(8 citation statements)
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“…By measuring the voltage at both ends of the heater, with the applied current flowing through, resistance of the heater can be obtained. Meanwhile, based on the temperature coefficient of resistance (TCR) of the thermistor, its temperature and the air pressure can be obtained correspondingly [63][64][65]. The higher the TCR, the more sensitive the thermistor (also the heater) to the change of temperature, and thus the higher sensitivity of the Pirani sensor can be achieved.…”
Section: Thermistor-based Pirani Sensorsmentioning
confidence: 99%
“…By measuring the voltage at both ends of the heater, with the applied current flowing through, resistance of the heater can be obtained. Meanwhile, based on the temperature coefficient of resistance (TCR) of the thermistor, its temperature and the air pressure can be obtained correspondingly [63][64][65]. The higher the TCR, the more sensitive the thermistor (also the heater) to the change of temperature, and thus the higher sensitivity of the Pirani sensor can be achieved.…”
Section: Thermistor-based Pirani Sensorsmentioning
confidence: 99%
“…[10] The passive technologies have become important methods in various fields, and relative researches have been carried out as can be found in Refs. [11][12][13] and others. Wang et al [14] used the main factors of temperature deviation to study the transport of steady-state heat flow.…”
Section: Introductionmentioning
confidence: 99%
“…In recent decades, scholars have committed to the development of high-performance micro-Pirani vacuum sensors that have a large dynamic vacuum pressure range, small size, and are complementary metal oxide semiconductor (CMOS) compatible. With the development of micromachining technology, various microelectromechanical systems (MEMS)-based micro-Pirani vacuum sensors with a complex structure and small size have been designed and fabricated [1,2,3]. These micro-Pirani vacuum sensors are particularly suitable to extremely miniaturized devices, and they offer the possibility of performing in situ vacuum pressure monitoring inside sealed MEMS packages of inertial sensors, such as gyroscopes, accelerometers, and inertial measurement units [4,5,6,7,8,9].…”
Section: Introductionmentioning
confidence: 99%