A CMOS image sensor using column-parallel forward noise-canceling circuitry

Abstract

In this paper, a new column-parallel analog readout architecture, which is composed of a high-gain amplifier, a forward noise-canceling circuitry (FNC), and sample-and-hold (S/H) capacitors, has been presented for low-noise CMOS image sensors (CIS). A FNC has been proposed to provide a sharp noise-filtering for high-frequency noise arising from the readout signal chain, which effectively reduces random noise of the pixel source follower and column amplifier. In order to keep the high-sensitivity and high-dynamic range output, dual-gain readout chains have been adopted. A prototype 400H × 250V CIS using the readout architecture with the FNC was fabricated in a 0.18 µm 1-poly 3-metal CMOS process with pinned-photodiodes. The experimental results revealed the input-referred noise of the proposed readout architecture was 65 µVrms, which has been reduced by 24% compared to that of the conventional readout architecture.