A CMOS-MEMS Accelerometer With U-Channel Suspended Gate SOI FET

Martha, Pramod; Kadayinti, Naveen; Seena, V.

doi:10.1109/jsen.2021.3060186

Cited by 5 publications

(3 citation statements)

References 31 publications

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“…The suspended gate of the FET is simulated as a capacitor and consists of an array of 17 rectangular movable and fixed electrodes with length 10

m and width 210

m. The gate length of 10

m corresponds to the channel length of the SGFET. A channel length of 10

m is considered, as the pseudo-short channel effects in the SGFET become severe below 10

m due to poor gate control [ 33 ]. The air gap between the fixed and movable electrodes is 2

m. To simulate the effect of hydrogen adsorption, an equivalent value of compressive stress is applied on the palladium ring.…”

Section: Simulation and Modellingmentioning

confidence: 99%

“…The gate length of 10 µm corresponds to the channel length of the SGFET. A channel length of 10 µm is considered, as the pseudo-short channel effects in the SGFET become severe below 10 µm due to poor gate control [33]. The air gap between the fixed and movable electrodes is 2 µm.…”

Section: Mems Ring-flexure-membrane Design Simulation and Electromech...mentioning

confidence: 99%

“…The inherent amplification property of a FET improves the output SNR and allows the easy integration of the sensor with the readouts circuits [ 31 ]. There are several reported studies where MEMS sensor technology is coupled with suspended gate field effect transistors (SGFET) for applications such as accelerometers, pressure sensors, and biosensors [ 32 , 33 , 34 , 35 , 36 ]. In such sensors, the mechanical input causes a displacement of the suspended gate.…”

Section: Introductionmentioning

confidence: 99%

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Polymer Ring–Flexure–Membrane Suspended Gate FET Gas Sensor: Design, Modelling and Simulation

2023

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This work reports the design, modelling, and simulation of a novel polymer MEMS gas sensor platform called a ring–flexure–membrane (RFM) suspended gate field effect transistor (SGFET). The sensor consists of a suspended polymer (SU-8) MEMS based RFM structure holding the gate of the SGFET with the gas sensing layer on top of the outer ring. During gas adsorption, the polymer ring–flexure–membrane architecture ensures a constant gate capacitance change throughout the gate area of the SGFET. This leads to efficient transduction of the gas adsorption-induced nanomechanical motion input to the change in the output current of the SGFET, thus improving the sensitivity. The sensor performance has been evaluated for sensing hydrogen gas using the finite element method (FEM) and TCAD simulation tools. The MEMS design and simulation of the RFM structure is carried out using CoventorWare 10.3, and the design, modelling, and simulation of the SGFET array is carried out using the Synopsis Sentaurus TCAD. A differential amplifier circuit using RFM-SGFET is designed and simulated in Cadence Virtuoso using the lookup table (LUT) of the RFM-SGFET. The differential amplifier exhibits a sensitivity of 2.8 mV/MPa for a gate bias of 3 V and a maximum detection range of up to 1% hydrogen gas concentration. This work also presents a detailed fabrication process integration plan to realize the RFM-SGFET sensor using a tailored self-aligned CMOS process adopting the surface micromachining process.

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“…The suspended gate of the FET is simulated as a capacitor and consists of an array of 17 rectangular movable and fixed electrodes with length 10

m and width 210

m. The gate length of 10

m corresponds to the channel length of the SGFET. A channel length of 10

m is considered, as the pseudo-short channel effects in the SGFET become severe below 10

m due to poor gate control [ 33 ]. The air gap between the fixed and movable electrodes is 2

m. To simulate the effect of hydrogen adsorption, an equivalent value of compressive stress is applied on the palladium ring.…”

Section: Simulation and Modellingmentioning

confidence: 99%

Section: Mems Ring-flexure-membrane Design Simulation and Electromech...mentioning

confidence: 99%