2011
DOI: 10.1109/led.2010.2086429
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A CMOS-MEMS Thermopile With Low Thermal Conductance and a Near-Perfect Emissivity in the 8–14-$\mu\hbox{m}$ Wavelength Range

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Cited by 29 publications
(5 citation statements)
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“…This thermopile sensor is illustrated in the microphotograph of Figure 11. Another way to improve the thermopile performance is increasing its absorptivity: this has been achieved by adopting thin dielectric films with good absorption properties or by coating nanomaterials (e.g., porus black materials, metamaterials [57,58]) on the IR absorber surface. The first solution achieves limited absorptivity values (∼0.7 in the 9-14 µm range), while the second suffers from process incompatibility, high cost and high thermal conductivity of metal black materials [59].…”
Section: Pyrometersmentioning
confidence: 99%
“…This thermopile sensor is illustrated in the microphotograph of Figure 11. Another way to improve the thermopile performance is increasing its absorptivity: this has been achieved by adopting thin dielectric films with good absorption properties or by coating nanomaterials (e.g., porus black materials, metamaterials [57,58]) on the IR absorber surface. The first solution achieves limited absorptivity values (∼0.7 in the 9-14 µm range), while the second suffers from process incompatibility, high cost and high thermal conductivity of metal black materials [59].…”
Section: Pyrometersmentioning
confidence: 99%
“…η S and η D are the target's and detector's IR absorber emissivities respectively. Due to the direct proportionality that is shown, research efforts were focused on enhancing the emissivity of the used infrared absorbers by using thin metal films [21], quarter wavelength absorbers [22], or gold-black coatings [23]. The IR absorption results in a heating of the structure, as seen in Figure 1b, with a resulting temperature difference that is directly related to the detector's thermal resistance R thermal such that:…”
Section: Working Principlementioning
confidence: 99%
“…Our research suggests that it will be more practical in thermal IR sensor applications and compatible with standard CMOS processes and more simplified signal processing. Due to the maturity of the processes and being compatible with standard CMOS technology, we devoted the promotion of IR elements to using CMOS-MEMS techniques which have proven particularly effective in the development of system on a chip (SOC) technology [ 32 , 33 , 34 ]. In summary, we give a new approach to improve the sensitivity of a CMOS-MEMS IR sensor with drop-coated rGO to achieve high thermal radiation absorption.…”
Section: Introductionmentioning
confidence: 99%