A CMOS, self-biased charge amplifier

Amendola, Gilles; Blanchard, Yves; Exertier, Anne; Lu, Guo‐Neng; Alquié, G.

doi:10.1109/mmica.1999.833580

Cited by 2 publications

(1 citation statement)

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“…Particularly, since capacitive micro-sensors have very small variations (L\C iO-4 pF in our case, with a total sensor capacitance C0 2 pF), it is needed for the electronic circuit to perform sensitive capacitance-voltage conversion, with minimum noise and parasitic capacitance contributions [1][2][3][4]. In order to take technical advantages of capacitive sensors, there are more restrictive performance specifications for the associated circuit.…”

Section: Introductionmentioning

confidence: 99%

<title>Signal processing electronics for a capacitive microsensor</title>

Amendola¹,

Lu²

2000

SPIE Proceedings

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An interface circuit in a O.8-Mm CMOS process for the on-chip integration of a capacitive micro-sensor used as a microphone is presented. In order to circumvent 1/f noise contributions and to improve the signal/noise ratio, a synchronous modulationdemodulation technique has been applied. For the implementation of this technique, we have studied and designed several functional block, such as modulator with signal conversion, low-noise amplifier, demodulator, etc. To deal with problems related to dispersions of intrinsic capacitance of the sensor, a feedback compensating solution is suggested. The designed circuit has a sensibility of 1200 V/pF, with a minimum detectable capacitance variation of 2 106 pF.

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Section: Introductionmentioning

confidence: 99%