2021
DOI: 10.1587/transele.2020cdp0004
|View full text |Cite
|
Sign up to set email alerts
|

A CMOS SPDT RF Switch with 68 dB Isolation and 1.0 dB Loss Feathering Switched Resonance Network for MIMO Applications

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
3
0

Year Published

2022
2022
2024
2024

Publication Types

Select...
5

Relationship

1
4

Authors

Journals

citations
Cited by 5 publications
(3 citation statements)
references
References 26 publications
0
3
0
Order By: Relevance
“…As the gate width increases, the OFF-capacitance C off increases proportionally, while the ON-resistor R on decreases inversely. A small R on results in a low IL, but a large C off degrades the isolation [26]. In this design, the gate width is set to 76.8 μm to achieve low IL.…”
Section: ) 5-bit Binary-weighted Transistor Arraymentioning
confidence: 99%
See 1 more Smart Citation
“…As the gate width increases, the OFF-capacitance C off increases proportionally, while the ON-resistor R on decreases inversely. A small R on results in a low IL, but a large C off degrades the isolation [26]. In this design, the gate width is set to 76.8 μm to achieve low IL.…”
Section: ) 5-bit Binary-weighted Transistor Arraymentioning
confidence: 99%
“…The two 4-GHz IF signals are connected to separate output ports since they have different phases.1) RF DPDT Switch: Fig.16shows the detailed circuit diagram of the RF DPDT switch. The switched parallel resonance network topology[26] is utilized to reduce the IL. To connect the input port IN1 to the output port OUT1, MOS transistors M 2 and M 4 turn off and M 1 and M 3 turn on.…”
mentioning
confidence: 99%
“…However, both GaAs and SOS technologies need expensive substrate and extra CMOS-based digital circuits. Although standard bulk CMOS technology provides good system integration capability [13], it suffers from poor linearity and high IL due to RF coupling through the lossy substrate and parasitic effects [14,15,16,17,18]. Because of high integration capability, low parasitic capacitance, and low substrate losses, SOI CMOS technology is proved to be an excellent candidate for switch design [19,20,21,22].…”
Section: Introductionmentioning
confidence: 99%