A CMOS Temperature Sensor Circuit

Low-Power High-Rensponsivity CMOS Temperature Sensor

“…5 shows the layout of the proposed sensor, which occupies a silicon area of 0.035mm2. The area is about one fifth of the circuit of Ohzone et al [5], mainly due to the technology scaling. In order to estimate the accuracy of this circuit, we have provided some Monte Carlo analysis, simulating variations on transistor's dimensions over a gaussian distribution with 3ur equal to 0.18um (which is 30% of the minimum length allowed for that technology).…”

“…The PTAT sensor proposed by Ohzone et al [5] is based on a combination of MOSFETs operating in different regions. Due to the use of an well-isolated NMOS transistor, an extra step in fabrication process is necessary.…”

“…Another advantage is the low fabrication cost provided by the use of inexpensive conventional CMOS processes. The temperature sensor circuit proposed by Ohzone et al [5] utilizes all those ideas, including low voltage supply dependence and high responsitivity. However, it may not be built on a conventional CMOS process, since it uses a single bulk-connected-to-source NMOS transistor placed between two other transistors which do not share the same substrate.…”

“…In this paper, we propose an alternative to the circuit presented by Ohzone et al [5] that allows the fabrication of the temperature sensor on a conventional n-well CMOS process without the need of extra layers. The proposed circuit utilizes an alternative architecture, in which the sensor element is a PMOS transistor that has its bulk naturally insulated from the others.…”

CMOS Temperature Sensor with Programmable Temperature Range for Biomedical Applications

“…This sensor in general achieves low power consumption, but it has small sensitivity. The other high sensitivity temperature sensors are also proposed [9], [10]. However, these sensors are not low voltage and it consumes high power.…”