A CMOS Temperature Sensor With a Voltage-Calibrated Inaccuracy of $\pm$0.15$ ^{\circ}$C (3$\sigma$) From $-$55$^{\circ}$C to 125$^{\circ}$C

Abstract

This paper describes the design of a low power, energy-efficient CMOS smart temperature sensor intended for RFID temperature sensing. The BJT-based sensor employs an energy-efficient 2 nd-order zoom ADC, which combines a coarse 5-bit SAR conversion with a fine 10-bit Σ∆ conversion. Moreover, a new integration scheme is proposed that halves the conversion time, while requiring no extra supply current. To meet the stringent cost constraints on RFID tags, a fast voltage calibration technique is used, which can be carried out in only 200msec. After batch calibration and an individual room-temperature calibration, the sensor achieves an inaccuracy of ±0.15°C (3σ) from-55°C to 125°C. Over the same range, devices from a second lot achieved an inaccuracy of ±0.25°C (3σ) in both ceramic and plastic packages. The sensor occupies 0.08mm 2 in a 0.16μm CMOS process, draws 3.4μA from a 1.5V to 2V supply, and achieves a resolution of 20mK in a conversion time of 5.3msec. This corresponds to a minimum energy dissipation of 27nJ per conversion.

Design of Advanced Thermal Sensors Which Uses Low Power Consumption

“…Better linearity is achieved using the Analog to Digital Converter (ADC) based thermal sensor [3,4]. The thermal sensor presented here was fabricated in the 22 nm process.…”

“…Such applications require a relatively high precision thermal sensor (typically ±3 °C in a wide temperature range), in order to achieve high reliability and performance [1,2]. The conventional method of thermal sensing is based on diode connected Bipolar Junction Transistor (BJT) voltage temperature dependence [2][3][4][5][6][7]. A base-emitter voltage equation of BJT transistor is :…”

Untrimmed Low-Power Thermal Sensor for SoC in 22 nm Digital Fabrication Technology

“…Better linearity is achieved using the Analog to Digital Converter (ADC) based thermal sensor [3,4]. In this architecture, the differential voltage is amplified and converted into a digital word by an ADC.…”

“…Such applications require a relatively high OPEN ACCESS precision thermal sensor (typically ±3 °C in a wide temperature range), in order to achieve high reliability and performance [1,2]. The conventional method of thermal sensing is based on diode connected Bipolar Junction Transistor (BJT) voltage temperature dependence [2][3][4][5][6][7]. A base-emitter voltage equation of BJT transistor is (to first order approximation):…”

Multifunctional Platform with CMOS-Compatible Tungsten Microhotplate for Pirani, Temperature, and Gas Sensor

“…Recently, complementary metal oxide semiconductor (CMOS) compatible sensors have been widely used in the detection of pressure, temperature, acceleration, and chemical leakage [1][2][3][4]. With better control and optimization of CMOS technology, the manufacturing yield of the sensors can be dramatically increased [5].…”