A CMOS transceiver with internal PA and digital pre-distortion for WLAN 802.11a/b/g/n Applications

Abstract

A 2.4/5GHz Fully-Integrated Transceiver is implemented in 65nm CMOS technology. To alleviate the cost of external front-end components, the G-mode RF transmit/receive (T/R) switch and a power-efficient linear CMOS PA are fully integrated on-chip. On the other hand, for better performance, only the A-mode PA is integrated onchip while the external T/R switch is used. It shows 5dB and 5.5dB NF in the G-mode and A-mode receivers respectively. Also, the transmitter delivers an average power of 18dBm OFDM (64QAM, 54MBPS) signal with EVM of -28dB for Gmode application and 16dBm OFDM (64QAM, 54MBPS) signal with EVM of -28dB for A-mode application after digital pre-distortion. Index Terms -WLAN 802.11A/B/G/N, CMOS PA, CMOS switch, CMOS transceiver, Digital Pre-distortion. 978-

A 4.4-6.4-GHz compact SiGe power amplifier with 30.5-dBm psat and 34.8% PAE based on triple-tank power combiner

“…III-V technologies, such as GaAs and GaN, are widely used for high-power and high-efficiency PAs for the Sub-6GHz band due to high electron mobility and high breakdown voltage [2,3,4,5,6]. By contrast, Si-based processes are attractive for their ease of integration and low cost [7,8,9]. However, it is fairly challenging to improve the linearity of Si-based PAs.…”