A CMOS voltage-controlled oscillator using a cascode structure

Abstract

In this study, a cascode CMOS voltage-controlled oscillator (VCO) to reduce the power consumption related to the RF system level and to increase the output power was proposed. The proposed VCO core consists of a cascode structure to increase the supply voltage of the VCO. To mitigate the reliability problems associated with gatesource and gate-drain breakdowns, the gate nodes of common-source transistors were connected to the source nodes of common-gate transistors. To verify the functionality of the proposed VCO, a 2.4-GHz CMOS VCO using the 110-nm RF CMOS process was designed. From the measured results, a relatively high output power with a 2.2 V supply voltage was obtained.

An Rf Transceiver for Wireless Chip-to-Chip Communication Using a Cross-Coupled Oscillator

“…Consequently, the proposed oscillator itself acts as the OOK modulator. In general, the output voltage of an oscillator for mobile applications should be controlled with high accuracy, to obtain a high data rate [16,17]. Accordingly, the phase noise and harmonic components at the output signal of the oscillator should be sufficiently suppressed for mobile applications.…”

Signatures of spin-phonon coupling in hematite crystallites through dielectric and Raman spectroscopy

“…This is irrespective of a specific magnetic symmetry or the peculiar spin configuration such as that involved in ME multiferroics or in DMI-driven spin-canted systems [10][11][12][13]. The dielectric anomalies in MD materials are tied to spin-phonon interactions and such systems (single phase or composites) are therefore equally important for practical applications [14][15][16]. It is interesting to note that in the case of hematite, an anomaly in the vicinity of the Morin transition, which is basically an AFM to canted-AFM transition, is reported [17].…”