Optical Fiber Communication Conference 2014
DOI: 10.1364/ofc.2014.th1c.2
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A CMOS Wafer-Scale, Monolithically Integrated WDM Platform for TB/s Optical Interconnects

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Cited by 7 publications
(3 citation statements)
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“…The laser wavelength is set by controlling the wavelength selective elements inside the external cavity. Significant progresses toward the realization of low cost hybrid lasers in silicon photonics have been shown in [15] [16] where the III-V integration is realized at wafer level without the need of an active alignment of each single light generator chip to the silicon substrate. These last developments indicate that a practical realization of low-cost, mass producible, high speed multi-channel DWDM transceivers for transmission up to 20 Km in silicon photonic platform is realistic.…”
Section: Enabling Photonic Technologiesmentioning
confidence: 99%
“…The laser wavelength is set by controlling the wavelength selective elements inside the external cavity. Significant progresses toward the realization of low cost hybrid lasers in silicon photonics have been shown in [15] [16] where the III-V integration is realized at wafer level without the need of an active alignment of each single light generator chip to the silicon substrate. These last developments indicate that a practical realization of low-cost, mass producible, high speed multi-channel DWDM transceivers for transmission up to 20 Km in silicon photonic platform is realistic.…”
Section: Enabling Photonic Technologiesmentioning
confidence: 99%
“…The first solution is a butt-coupling method between active devices and Si photonics chip, which are fabricated discretely. 20,21) In this method, high quality and reliable chips are available as long as coupling loss can be compensated. The second involves heteroepitaxial growth on a Si substrate.…”
Section: Introductionmentioning
confidence: 99%
“…A photonic integration technology allows for cost-effective realization of the ROADMs and transceivers [8]; in particular, silicon photonics are most suitable for large-scale integrated switching devices due to its characteristics of easy integration with control electronics, high miniaturization, mass producibility and low cost due to the use of a well-established Complementary Metal Oxide Semiconductor (CMOS) production infrastructure. Concerning integrated multiwavelength transceivers, relevant technological advances have been made with two different technological approaches that lead to InP monolithic-integrated DWDM transceivers and silicon photonics-based transceivers [18,19].…”
mentioning
confidence: 99%