A collective impact ionization theory of lock-on [in pulsed power switches]

Hjalmarson, Harold P.; Loubriel, G.M.; Zutavern, F.J.; Wake, D.R.; Kang, Samsoo; Kambour, Kenneth E.; Myles, Charles W.

doi:10.1109/ppc.1999.825470

Cited by 8 publications

(11 citation statements)

References 8 publications

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“…Then the dipole is most likely formed near the cathode, thus it has the longest distance to transfer to the anode and quenches, which lead to the longest delay time as displayed in Figure 9c. As for jitter, it's obvious that the delay should remain constant as far as possible to reduce the jitter, which is theoretically attributed to the perturbation of space-charge [20]. Therefore, the bigger the trigger spot is, the more unstable the dipole locates, and the bigger the jitter will be.…”

Section: Discussionmentioning

confidence: 99%

Characteristics of GaAs PCSS triggered by 1 μJ laser diode

Zhang

Liu

Gao

et al. 2015

IEEE Trans. Dielect. Electr. Insul.

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Various kinds of switches exhibit significant function in the field of pulse power. Among them Photoconductive Semiconductor Switch (PCSS) stands out because of its numerous advantages, such as low time jitter, fast response, high repetition rate, compact size, easy integration and so on. Laser Diode (LD) is small in size, low-cost and can be easily integrated compared with traditional laser devices. Waveguide tube is a kind of laser transmission device. By using LDs which emits laser pulse with a dominant wavelength of 905 nm and a waveguide tube, three different shapes of laser spot are obtained to trigger a semi-insulating GaAs PCSS which has vertical structure. Laser energy and laser power are fixed to 1 μJ and 33.3 W separately. As the illuminating area on the PCSS differs with different shapes of laser spot, the influences of average trigger energy per unit area to the output characteristics of the PCSS are studied. The experiment results demonstrate that not only the total trigger energy but also the energy density influences the characteristics of PCSS. This paper presents related experiment results, and some further discussions are given.

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Section: Discussionmentioning

confidence: 99%

Characteristics of GaAs PCSS triggered by 1 μJ laser diode

Zhang

Liu

Gao

et al. 2015

IEEE Trans. Dielect. Electr. Insul.

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“…After the images of current filaments were reported [1,2], S-shaped current-voltage (I-V) characteristics of the device were expected [3] and the physics of streamers were researched [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18]. Experimental investigations have shown the characteristics [4] and velocity [5,6] and the carrier density [7,8] of current filaments, revealed the relation between the streamer and the domain-like structures in the device [9], verified that avalanche carrier growth initiates the onset of streamer at relatively low electric fields [10], and measured the highest optical energy from any current filament semiconductor lasers, 75nJ, at one end of an uncoated 2.5 mm long device [11].…”

Section: Introductionmentioning

confidence: 99%

“…Experimental investigations have shown the characteristics [4] and velocity [5,6] and the carrier density [7,8] of current filaments, revealed the relation between the streamer and the domain-like structures in the device [9], verified that avalanche carrier growth initiates the onset of streamer at relatively low electric fields [10], and measured the highest optical energy from any current filament semiconductor lasers, 75nJ, at one end of an uncoated 2.5 mm long device [11]. Theoretical investigations have indicated that both photo-ionization and avalanche carrier generation play an important role [12][13][14][15] during streamer propagation, and high carrier densities (n c ≥~10 17 cm -3 ) can cause electrical breakdown which leads to the onset of filament at relatively low electric fields [10,[16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Streamer in high gain GaAs photoconductive semiconductor switches

Hong

Ruan

2009

2009 IEEE Pulsed Power Conference

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The streamer formation and propagation in high gain semi-insulating (SI) GaAs photoconductive semiconductor switches (PCSS) is analyzed in detail. This streamer model on the basis of photo-ionization, growing domain, and the collective impact ionization (CII) mechanism can explain the propagation velocity and the branch and the bend of streamer. This model is characterized by introducing the growing domain between photo-ionization and collective avalanche carrier generation during each stage in which the streamer forms. The calculated results of photo-ionization effects and the propagation velocities of streamer imply that this model is reasonable because the results are consistent with the reported experimental observations.

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“…Such behavior is expected at high carrier density because carrier-carrier scattering makes the distribution function more Maxwellian [10,11]. As a result, a larger fraction of the carriers are in the high energy tail of the distribution function that produces impact ionization.…”

Section: A Qualitative Solutionmentioning

confidence: 98%

Theory of optically-triggered electrical breakdown of semiconductors

Kambour

Hjalmarson²,

Myles³

2003 Annual Report Conference on Electrical Insulation and Dielectric Phenomena

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Abstract:In this paper, we describe a rate equation approach that leads to new insights about electrical breakdown in insulating and semiconducting materials. In this approach, the competition between carrier generation by impact ionization and carrier recombination by Auger and defect recombination leads to steady state solutions for the carrier generation rate, and it is the accessibility of these steady state solutions, for a given electric field, that governs whether breakdown does or does not occur. This approach leads to theoretical definitions for not only the intrinsic breakdown field but also other characteristic quantities. Results obtained for GaAs using a carrier distribution function calculated by both a Maxwellian approximation and an ensemble Monte Carlo method will be discussed.

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A collective impact ionization theory of lock-on [in pulsed power switches]

Cited by 8 publications

References 8 publications

Characteristics of GaAs PCSS triggered by 1 μJ laser diode

Characteristics of GaAs PCSS triggered by 1 μJ laser diode

Streamer in high gain GaAs photoconductive semiconductor switches

Theory of optically-triggered electrical breakdown of semiconductors

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