A Combination of Implant Shadow and Skin Effects Leading to HV Devices Failure during the ESD Event

Lee, Jian-Hsing; Li, Ching-Ho; Liao, Chih-Cherng; Huang, Yeh-Jen; Nidhi, Karuna; Hong, Li-Yang; Lin, Ting-You; Jou, Yeh-Ning; Huang, Shao-Chang; Chen, Ke-Horng

doi:10.1109/ipfa58228.2023.10249114

2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) 2023

DOI: 10.1109/ipfa58228.2023.10249114

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A Combination of Implant Shadow and Skin Effects Leading to HV Devices Failure during the ESD Event

Jian-Hsing Lee,

Ching-Ho Li,

Chih-Cherng Liao

et al.

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Cited by 3 publications

References 16 publications

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Negative Triggering Current Induced the Latch-up in the Circuit without the ESD device to Power

Huang,

Hong,

Jou

et al. 2024

2024 International Conference on Consumer Electronics - Taiwan (ICCE-Taiwan)

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Negative Triggering Current Induced the Latch-up in the Circuit without the ESD device to Power

Huang,

Hong,

Jou

et al. 2024

2024 International Conference on Consumer Electronics - Taiwan (ICCE-Taiwan)

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RESURF Region Variation Induced Current Crowding Effect on HV p-LDMOS

Lee,

Li,

Nidhi

et al. 2023

2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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The Effect of the P-Substrate Connection on the HBM Robustness of P-type ESD Device

Lee,

Liao,

Lin

et al. 2024

2024 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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A Combination of Implant Shadow and Skin Effects Leading to HV Devices Failure during the ESD Event

Cited by 3 publications

References 16 publications

Negative Triggering Current Induced the Latch-up in the Circuit without the ESD device to Power

Negative Triggering Current Induced the Latch-up in the Circuit without the ESD device to Power

RESURF Region Variation Induced Current Crowding Effect on HV p-LDMOS

The Effect of the P-Substrate Connection on the HBM Robustness of P-type ESD Device

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