A combined AES, resonant photoemission and EELS study of in-situ grown titanium nitride

Walker, Christopher; Anderson, C. A.; McKinley, A; Brown, N. M. D.; Joyce, Adriana

doi:10.1016/s0039-6028(97)00179-9

Cited by 23 publications

(10 citation statements)

References 64 publications

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“…The density parameter r S = 1 .6 1 a.u . for the FEG (which corresponds to ~7 electrons per molecule) was obtained from the experimental plasmon energy of TiN 27 . On this basis, for protons, excellent agreement with DFT predictions has been found 26 .…”

Section: Resultsmentioning

confidence: 99%

On the Z1-dependence of electronic stopping in TiN

Sortica

Paneta

Bruckner

et al. 2019

Sci Rep

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We present a thorough experimental study of electronic stopping of H, He, B, N, Ne and Al ions in TiN with the aim to learn about the energy loss mechanisms of slow ions. The energy loss was measured by means of time-of-flight medium-energy ion scattering. Thin films of TiN on silicon with a δ-layer of W at the TiN/Si interface were used as targets. We compare our results to non-linear density functional theory calculations, examining electron-hole pair excitations by screened ions in a free electron gas in the static limit, with a density equivalent to the expected value for TiN. These calculations predict oscillations in the electronic stopping power for increasing atomic number Z1 of the projectile. An increasing discrepancy between our experimental results and predictions by theory for increasing Z1 was observed. This observation can be attributed to contributions from energy loss channels different from electron-hole pair excitation in binary Coulomb collisions.

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Section: Resultsmentioning

confidence: 99%

On the Z1-dependence of electronic stopping in TiN

Sortica

Paneta

Bruckner

et al. 2019

Sci Rep

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“…Although the optical properties and electronic structure of TiN and TiN x have been studied previously 10,[15][16][17][18][19][20][21][22][23][24][25] their correlation with the microstructural features and the process parameters during deposition, affecting their stoichiometry and microstructure, 12,26 -28 has not been established yet. In this work we address the optical properties of thin sputtered TiN x films in terms of their complex dielectric function ͓()ϭ 1 ϩi 2 ͔ measured by spectroscopic ellipsometry ͑SE͒.…”

Section: Introductionmentioning

confidence: 99%

Optical, electronic, and transport properties of nanocrystalline titanium nitride thin films

Patsalas

Logothetidis

2001

Journal of Applied Physics

283

223

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Heteroepitaxial VO2 thin films on GaN: Structure and metal-insulator transition characteristics J. Appl. Phys. 112, 074114 (2012) Investigation of nonuniformity phenomenon in nanoscale SiO2 and high-k gate dielectrics J. Appl. Phys. 112, 064119 (2012) Strain dependent stabilization of metallic paramagnetic state in epitaxial NdNiO3 thin films Appl. Phys. Lett. 101, 132101 (2012) Electrical and optical properties of vanadium dioxide containing gold nanoparticles deposited by pulsed laser deposition Appl.Spectroscopic ellipsometry ͑SE͒ was employed to get insights on the optical, electronic, and transport properties of nanocrystalline titanium nitride (TiN x ) films with respect to their microstructure and stoichiometry. The films' properties can be tailored by varying the energy of bombarding ions during sputter deposition and the substrate temperature (T d ). The best metallic behavior of TiN x ͑resistivity 40 ⍀ cm and conduction density 5.5ϫ10 22 electrons/cm 3 ͒ has been observed in films developed with energy above 100 eV and T d у400°C. A redshift of the optical gaps has been observed for overstoichiometric films, suggesting it as a sensitive probe to investigate the TiN x stoichiometry. The energy, strength, and broadening of the interband transitions were studied with respect to the energy of ions and T d and they were explicitly correlated with the TiN x crystal cell size and grain orientation. On the other hand, the study of intraband absorption has provided the conduction electron density with respect to ion energy and T d , which promotes the densification of TiN x films due to different mechanisms. Combined SE and x-ray analysis was used to identify the electron scattering mechanisms, showing that the main electron scattering sites are the grain boundaries and the Ti vacancies for stoichiometric (xϭ1) and overstoichiometric (xϳ1.1) films, respectively.

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“…Many techniques, such as X-ray photoelectron spectroscopy (XPS) (Prieto & Kirby, 1995), Auger electron spectroscopy (AES) (Tompkins, 1991;Kottke et al, 1991), electron energy-loss spectroscopy (EELS) (Walker et al, 1997), transmission electron microscopy (TEM) and electron dispersive spectroscopy (EDS) (Lee et al, 1999), and X-ray absorption spectroscopy (XAS) (Soriano, et al, 1993), have been used to study the thermal properties of TiN x films and to understand the failure mechanism of the TiN x barrier. In this work, we study a series of Al/TiN x /Si(100) thin films as a function of the TiN x film thickness (100Å-500Å) and of the annealing temperature (400°C -600 °C), using multi-element, multi-edge and multi-detection mode X-ray photoabsorption spectroscopy.…”

Section: Introductionmentioning

confidence: 99%

A study of titanium nitride diffusion barriers between aluminium and silicon by X-ray absorption spectroscopy: the Si, Ti and N results

Hu¹,

Sham²,

Zou³

et al. 2001

J Synchrotron Radiat

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We report a multi-elment, multi-edge and multi-detection mode X-ray photoabsorption study of a series of Al/TiN(x)/Si(100) thin films as a function of the TiN(x) film thickness (100A-500A) and of the annealing temperature (400 degrees C-600 degrees C). The Si K- and L-edge results show that Si does not diffuse to the surface for all the films. The high resolution Ti L-edge and N K-edge spectra show that the TiN(x) layer undergoes a dramatic chemical reaction with the gradual increase in the annealing temperature. This chemical reaction stabilizes at 560 degrees C at which the TiN(x) film is known to fail to act as an effective diffusion barrier between Al and Si.

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A combined AES, resonant photoemission and EELS study of in-situ grown titanium nitride

Cited by 23 publications

References 64 publications

On the Z1-dependence of electronic stopping in TiN

On the Z1-dependence of electronic stopping in TiN

Optical, electronic, and transport properties of nanocrystalline titanium nitride thin films

A study of titanium nitride diffusion barriers between aluminium and silicon by X-ray absorption spectroscopy: the Si, Ti and N results

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