2015
DOI: 10.1109/jeds.2015.2418785
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A Commercial-Simulator-Based Numerical-Analysis Methodology for 4H-SiC Power Devices Formed on Misoriented (0001) Substrates

Abstract: A commercial-simulator-based numerical-analysis methodology for 4H-SiC power devices formed on misoriented (0001) substrates is proposed and applied for analyzing avalanche breakdown of floating-field-ring-terminated p-n diodes. Due to the inexpedience of a fixed orientation of the (0001) surface in current commercial device simulators, 4H-SiC (0001) surface is etched to form a miscut to separate the known effects of asymmetric nature of impact ionization and asymmetric aluminum concentration contours. 2-D pro… Show more

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Cited by 4 publications
(6 citation statements)
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“…The structure is similar to that proposed by Cheng et al for calculating the "BV-spacing curve" for the optimal FFR [15], except for the etched surface. Etching the 4H-SiC (0001) surface to expose the experimentally used 4 • misoriented (0001) surface is necessary [16] since the surface orientation is on-axis (0001) in such commercial device simulators as Sentaurus Device [17] and ATLAS [18]. Structures A and B, respectively, represent an FFR in the [1 120] direction and an FFR in the [1120] direction (i.e., the off direction).…”
Section: Simulationmentioning
confidence: 99%
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“…The structure is similar to that proposed by Cheng et al for calculating the "BV-spacing curve" for the optimal FFR [15], except for the etched surface. Etching the 4H-SiC (0001) surface to expose the experimentally used 4 • misoriented (0001) surface is necessary [16] since the surface orientation is on-axis (0001) in such commercial device simulators as Sentaurus Device [17] and ATLAS [18]. Structures A and B, respectively, represent an FFR in the [1 120] direction and an FFR in the [1120] direction (i.e., the off direction).…”
Section: Simulationmentioning
confidence: 99%
“…In both structures, only the outer part of the anode and the inner part of the FFR are included [15]. The anode and a 5-µm-wide FFR were simultaneously formed by Monte Carlo simulation of four-fold aluminum implantation (at room temperature) normal to the wafer surface under the following conditions: 145 keV/1.0×10 14 cm −2 , 95 keV/3.5×10 13 cm −2 , 60 keV/3.0×10 13 cm −2 , and 35 keV/1.5×10 13 cm −2 [16].…”
Section: Simulationmentioning
confidence: 99%
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“…13,14) Since V BD is typically determined by the termination structure, many termination structures for SiC power devices have been investigated. [15][16][17][18][19][20][21][22][23][24][25][26][27] However, whether the change occurs at the SiO 2 =SiC interface or in the bulk SiC has not been clarified because the change was only indicated by reverse current-reverse voltage (I R -V R ) characteristics. To experimentally determine where the change occurs, the authors previously proposed a novel method: measuring the depletion-layer capacitance in the termination area of SiC PN diodes.…”
Section: Introductionmentioning
confidence: 99%