2022 IEEE/MTT-S International Microwave Symposium - IMS 2022 2022
DOI: 10.1109/ims37962.2022.9865635
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A Compact, 114-GHz, High-efficiency Power Amplifier in a 250-nm InP HBT Process

Jeff Shih-Chieh Chien
1
,
James F. Buckwalter
2
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Cited by 5 publications
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References 10 publications
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A 180-220-GHz, 12.7-dBm peak Psat and 17.3% peak PAE Power Amplifier in 250-nm InP HBT

Chien
1
,
Lee
2
,
Buckwalter
3
2022
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
3
0
1
0
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A 180-220-GHz, 12.7-dBm peak Psat and 17.3% peak PAE Power Amplifier in 250-nm InP HBT

Chien
1
,
Lee
2
,
Buckwalter
3
2022
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
3
0
1
0
View full textAdd to dashboardCite

A D-Band Sub-Harmonically Pumped Mixer with High LO Suppression Using 250-nm InP DHBT P-N Junction

Hachiyama,
Tanji,
Kuwabara
et al. 2023
2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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0
0
0
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A Multi-stage 19.2-dBm, 30.4%-PAE D-band Power Amplifier in a 250-nm InP HBT Process

Lam
1
,
Kang
2
,
Ahmed
3
et al. 2023
2023 IEEE/MTT-S International Microwave Symposium - IMS 2023
4
0
0
0
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