A Compact 26.5–29.5-GHz LNA-Phase-Shifter Combo With 360° Continuous Phase Tuning Based on All-Pass Networks for Millimeter-Wave 5G

Abstract

This article presents a compact integrated receiver front-end for phased-arrays at 5G n257/n261 band (26.5-29.5 GHz) employing both a low-noise amplifier (LNA) and a novel passive phase-shifter based on variable-phase all-pass networks. The proposed phase-shifter topology is analysed and designed using 0.25 µm BiCMOS achieving continuous tuning capabilities with 360 • phase range over a 25-33 GHz frequency range under 0.1 mm 2 of area. The proposed phase-shifter is measured standalone, achieving 8.3 ± 0.55 dB losses at 29 GHz with an RMS gain error below 0.6 dB across the entire frequency range. When quantizing the continuous phase-shift into 6 bits, an RMS phase error < 3 • is obtained. To build the LNA-Phase-shifter combo, the phase-shifter is then integrated with an LNA optimized for compactness, which was measured standalone, showing a noise figure below 3.2 dB across the n257/n261 band and 20 dB gain under 0.0625 mm 2 of area. The small size of both the phase-shifter and LNA enables an ultra-compact phasedarray receiver front-end under 0.2 mm 2 of area. The front-end is measured, achieving 11.5 ± 0.53 dB of gain, RMS gain error below 0.42 dB and RMS phase error below 3.2 • over the entire n257 band, measured input-referred P1dB of -25 dBm and a 15 mW DC power consumption.

mm-Wave Low Insertion Loss SIW Phase Shifter Based on Liquid Metal Technology

“…Also, the phase shifter has better FoM and higher phase shift in comparison to other LM phase shifters in [10]- [11], [27] which operate at 10GHz and 5.6GHz. In addition, the proposed phase shifter has higher FoM than phase shifters in [1]- [2], [10]- [11], [23]- [27]. Nonetheless, in contrast to CMOS and InGAS-based phase shifters in [1]- [2], [23], the suggested phase shifter presents limitations such as narrower bandwidth, reduced resolution, longer reconfiguration time, temperature limitation due to its melting point and a relatively larger physical footprint.…”

“…In addition, the proposed phase shifter has higher FoM than phase shifters in [1]- [2], [10]- [11], [23]- [27]. Nonetheless, in contrast to CMOS and InGAS-based phase shifters in [1]- [2], [23], the suggested phase shifter presents limitations such as narrower bandwidth, reduced resolution, longer reconfiguration time, temperature limitation due to its melting point and a relatively larger physical footprint. The estimated reconfiguration time for the proposed phase shifter ranges from milliseconds to few seconds, depending on the specific technique employed to actuate LM [15], [28]- [29].…”

“…This is due the fact that LM has a relatively high conductivity. The proposed phase shifter has much lower IL in comparison to phase shifters in [1]- [2], [11], [23]- [26] as summarized in TABLE II. Also, the phase shifter has better FoM and higher phase shift in comparison to other LM phase shifters in [10]- [11], [27] which operate at 10GHz and 5.6GHz.…”

A 37–40 GHz 6-Bits Switched-Filter Phase Shifter Using 150 nm GaN HEMT

“…It is crucial to provide appropriate phase and amplitude control signals to individual array elements [3]. Phased array systems utilize beam steering techniques to enhance the signal-to-noise ratio (SNR) and achieve spatial selectivity [4].…”

26.5∼29.5 GHz 6-Bit Switched-Filter Phase Shifter

“…고속 데이터 통신을 위한 5G 시스템 주파수 대역에서는 높은 전송 손 실을 극복하는 방법으로 많은 수의 안테나를 사용한 위 상배열 시스템이 적용되고 있다. 위상배열 시스템은 빔조 향을 이용하여 신호 대 잡음비(SNR, signal-to-noise ratio) 를 개선하고, 공간 선택성을 갖는다 [2] . 빔조향 방향에 따 라 각 안테나와 연결된 RF 단의 위상을 조절하는 위상천 이기는 필수 회로이다.…”