A Compact 28/39 GHz Dual-Band Concurrent/Band-Switching LNA for 5G Multi-Band Multi-Stream Applications

Cheng, Depeng; Chen, Qin; Feng, Jing; Chen, Xin; Ma, Xujun; Li, Lianming

doi:10.1109/rfic61187.2024.10600006

2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) 2024

DOI: 10.1109/rfic61187.2024.10600006

|View full text |Cite

A Compact 28/39 GHz Dual-Band Concurrent/Band-Switching LNA for 5G Multi-Band Multi-Stream Applications

Depeng Cheng,

Qin Chen,

Jing Feng

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2024

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Triple-Stacked FET Distributed Power Amplifier Using 28 nm CMOS Process

Kim,

Sung

2024

Electronics

View full text Add to dashboard Cite

A broadband 28 nm complementary metal–oxide–semiconductor (CMOS) power amplifier was implemented using a distributed amplification design. To develop a model library for high-frequency design, various test patterns for active and passive elements were fabricated and compared through measurements. As a result, a symmetrical n-channel field-effect transistor (NFET) was used as the active device, and a co-planar waveguide (CPW) with floating bottom metal layers was chosen as the transmission line for the passive element. These choices demonstrated superior radio frequency (RF) characteristics at high frequencies compared to other device candidates. Furthermore, to address the low breakdown voltage of CMOS, a triple-stacked FET structure was designed as the gain cell of the distributed power amplifier (DPA). The fabricated DPA showed a maximum small-signal gain of 22 dB and a minimum of 10 dB from DC to 56 GHz, with a maximum saturated output power of 20 dBm and a minimum of 13 dBm from 1 to 39 GHz. Notably, these results were achieved on the first attempt by designing solely based on measurement data from the test patterns.

show abstract

Triple-Stacked FET Distributed Power Amplifier Using 28 nm CMOS Process

Kim,

Sung

2024

Electronics

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

A Compact 28/39 GHz Dual-Band Concurrent/Band-Switching LNA for 5G Multi-Band Multi-Stream Applications

Cited by 1 publication

References 11 publications

Triple-Stacked FET Distributed Power Amplifier Using 28 nm CMOS Process

Triple-Stacked FET Distributed Power Amplifier Using 28 nm CMOS Process

Contact Info

Product

Resources

About