A Compact 30-W AlGaN/GaN HEMTs on Silicon Substrate With Output Power Density of 8.1 W/mm at 8 GHz

Lee, Minseong; Kim, Dong Hwan; Eom, Su-Keun; Cha, Ho-Young; Seo, Kwang-Seok

doi:10.1109/led.2014.2343233

Cited by 26 publications

(7 citation statements)

References 12 publications

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“…AlGaN/GaN heterojunction field-effect transistors (HFETs) have been extensively studied for high-efficiency power switching and high-frequency applications owing to their properties, such as wide energy bandgap, high critical electric field, and two-dimensional electron gas (2DEG) channels with high electron mobility and electron density [ 1 , 2 , 3 , 4 , 5 , 6 , 7 ]. While the power switching devices must be operated in a normally-off mode, conventional AlGaN/GaN HFETs exhibit normally-on characteristics.…”

Section: Introductionmentioning

confidence: 99%

Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode

et al. 2021

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In this study, we proposed a rectifying drain electrode that was embedded in a p-GaN gate AlGaN/GaN heterojunction field-effect transistor to achieve the unidirectional switching characteristics, without the need for a separate reverse blocking device or an additional process step. The rectifying drain electrode was implemented while using an embedded p-GaN gating electrode that was placed in front of the ohmic drain electrode. The embedded p-GaN gating electrode and the ohmic drain electrode are electrically shorted to each other. The concept was validated by technology computer aided design (TCAD) simulation along with an equivalent circuit, and the proposed device was demonstrated experimentally. The fabricated device exhibited the unidirectional characteristics successfully, with a threshold voltage of ~2 V, a maximum current density of ~100 mA/mm, and a forward drain turn-on voltage of ~2 V.

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Section: Introductionmentioning

confidence: 99%

Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode

et al. 2021

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“…AlGaN/GaN high-electron-mobility transistors (HEMTs) have been developed for high-power and high-frequency applications because of their excellent properties, such as high electron mobility of two-dimensional electron gas (2-DEG) channel, high breakdown field, and wide energy bandgap [1][2][3]. Although AlGaN/GaN HEMTs have high commercial applications in high-frequency power amplifier industries, the conventional Schottky-gate HEMTs suffer from large gate leakage current [4], which limits the output power performance and induces reliability issues [5].…”

Section: Introductionmentioning

confidence: 99%

Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate

et al. 2020

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This study investigated the effects of a thin aluminum oxynitride (AlOxNy) gate insulator on the electrical characteristics of AlGaN/GaN-on-SiC metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs). The fabricated AlGaN/GaN-on-SiC MIS-HEMTs exhibited a significant reduction in gate leakage and off-state drain currents in comparison with the conventional Schottky-gate HEMTs, thus enhancing the breakdown voltage. The effects of gate recess were also investigated while using recessed MIS-HEMT configuration. The Johnson’s figures of merit (= fT × BVgd) for the fabricated MIS-HEMTs were found to be in the range of 5.57 to 10.76 THz·V, which is the state-of-the-art values for GaN-based HEMTs without a field plate. Various characterization methods were used to investigate the quality of the MIS and the recessed MIS interface.

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“…1 Thus, this material system has not only formed the basis of the newgeneration of light emitting diodes (LEDs) 2 , but has also found increasing application in high electron mobility transistors (HEMTs) with potential applications at high powers, in the radio frequency regime and in robust solid state chemical sensors. [3][4][5] GaN-based HEMTs with AlGaN barrier layers have been demonstrated with high breakdown voltages, high output power densities and terahertz emission and detection 6,7 . However, due to the large mismatch between the natural lattice parameters of AlGaN and GaN, the risk of strain relaxation in the AlGaN barrier on top of the GaN channel raises concerns about the reliability of these devices.…”

Section: Introductionmentioning

confidence: 99%

Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors

Tang

Lee

Guiney

et al. 2018

Journal of Applied Physics

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We investigate the impact of a fluorine plasma treatment used to obtain enhancement-mode operation on the structure and chemistry at the nanometer and atomic scales of an InAlN/GaN field effect transistor. The fluorine plasma treatment is successful in that enhancement mode operation is achieved with a +2.8 V threshold voltage. However, the InAlN barrier layers are observed to have been damaged by the fluorine treatment with their thickness being reduced by up to 50%. The treatment also led to oxygen incorporation within the InAlN barrier layers. Furthermore, even in the as-grown structure, Ga was unintentionally incorporated during the growth of the InAlN barrier. The impact of both the reduced barrier thickness and the incorporated Ga within the barrier on the transistor properties has been evaluated theoretically and compared to the experimentally determined two-dimensional electron gas density and threshold voltage of the transistor. For devices without fluorine treatment, the two-dimensional electron gas density is better predicted if the quaternary nature of the barrier is taken into account. For the fluorine treated device, not only the changes to the barrier layer thickness and composition, but also the fluorine doping needs to be considered to predict device performance. These studies reveal the factors influencing the performance of these specific transistor structures and highlight the strengths of the applied nanoscale characterisation techniques in revealing information relevant to device performance.

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A Compact 30-W AlGaN/GaN HEMTs on Silicon Substrate With Output Power Density of 8.1 W/mm at 8 GHz

Cited by 26 publications

References 12 publications

Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode

Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode

Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate

Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors

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