A Compact Double-Sided Cooling 650V/30A GaN Power Module With Low Parasitic Parameters

Li, Bingyang; Yang, Xu; Wang, Kangping; Zhu, Hongkeng; Wang, Laili; Chen, Wenjie

doi:10.1109/tpel.2021.3092367

Cited by 43 publications

(4 citation statements)

References 41 publications

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“…and the package in which the die is placed is designed and implemented. This method has also reported results of less than 1 nH parasitic inductance in experimental results [20], [21], [22].…”

Section: Ferrite Beadsmentioning

confidence: 67%

“…And lastly is the approach to optimise the device packaging. In this approach, only the die of the switching device is used, [15], [16], [13], [17], [18], [19], [20], [21], [22] Slower switching  A resistor on the gate terminal or slower slew rate of the gate driver  straightforward to implement  Not very effective in reducing oscillations  Increase in switching losses [23], [24].…”

Section: B Minimisation Of Parasitic Inductancementioning

confidence: 99%

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Fundamental Modeling of the Switching Transition in High-Speed Power Electronics

Toit,

Hofsajer

2024

IEEE Access

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Recent advances in semiconductor technology have paved the way for ultra-fast switching capabilities. This increase in switching speed enhances efficiency, power density, and frequency but also increases overvoltage oscillations at the switching node. Existing methods that effectively suppress this overvoltage include slower switching and minimisation of inductance, but unfortunately, these methods become very difficult to implement as the switching speed increases. A new oscillation suppression method, Zero Overvoltage Switching (ZOS), has previously been developed in which the overvoltage is suppressed very effectively by increasing both the switching speed and inductance, contrary to mainstream expectation. This is the only oscillation suppression method that becomes more effective as the switching speed increases and is not constrained by the minimisation of inductance, yet this method has not gained widespread recognition. This is expected because Zero Overvoltage Switching is not explained within the context of existing knowledge, and the argument for implementing it is difficult in the very narrow window where the advantages outweigh the effort. This research develops a generalised fundamental model to better understand Zero Overvoltage Switching by describing the mechanics of fast and slow switching events. The model is also able to provide insights that lead to methods to apply Zero Overvoltage Switching over a broader range of voltages and currents.INDEX TERMS Wide Bandgap(WBG), Ultra Wide Bandgap (UWBG), Zero Overvoltage Switching (ZOS), Oscillation Suppression Methods

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Section: Ferrite Beadsmentioning

confidence: 67%

Section: B Minimisation Of Parasitic Inductancementioning

confidence: 99%

Fundamental Modeling of the Switching Transition in High-Speed Power Electronics

Toit,

Hofsajer

2024

IEEE Access

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“…Therefore, by using the aforementioned techniques it is possible to achieve the structures shown in figures 6(a)-9(a). For a top and bottom heat sink configuration Li et al demonstrated the implementation of a doublesided cooling solution for GaN HEMTs which can be used to produce the heat sink configurations illustrated in figures 8(a) and 9(a) [45]. Even though there are several growth and processing challenges, such as avoiding surface damage on the top of the device, wafer bow and high residual thermal stress [46], ensuring a voidless GaN/diamond interface [47] and interface robustness [48], among other challenges, these problems are not insurmountable and the thermal management of future generations of AlGaN/GaN HEMT devices can be enhanced.…”

Section: Resultsmentioning

confidence: 99%

Understanding of multiway heat extraction using peripheral diamond in an AlGaN/GaN high electron mobility transistor by electrothermal simulations

Gohel,

Zhou,

Mukhopadhyay

et al. 2024

Semicond. Sci. Technol.

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High power operation of high electron mobility transistors (HEMTs) is limited due to a variety of thermal resistances in the HEMT device causing self-heating effects (SHEs) in the device. To reduce the SHEs, diamond heat spreaders integrated to the device have proven efficient for heat extraction from the device. In this report using electro-thermal TCAD simulations, we demonstrate an understanding of multiway heat extraction utilizing diamond heat spreaders for improving HEMT thermal performance at high DC output power density(~40 W/mm). The impact of each heat extraction pathway is understood while considering the thermal boundary resistance between Diamond/GaN hetero-interface and optimization of the GaN buffer layer thickness. Using these findings, we simulated an AlGaN/GaN HEMT device operating at 40 W/mm DC output power while maintaining device temperature at approximately 470 - 500 K.

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“…For a significant improvement of the thermal path from the junction to the heat sink, a double‐sided cooling approach is presented in ref. [19]. The GaN bare dies are soldered to a direct plated copper (DPC) substrate on both their top‐ and bottom‐sides.…”

Section: State Of Researchmentioning

confidence: 99%

Power Module Design for GaN Transistors Enabling High Switching Speed in Multi‐Kilowatt Applications

2023

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The advantages of gallium nitride and silicon carbide transistors over silicon devices are highlighted. The design criteria for power modules in multi‐kilowatt applications to effectively leverage these advantages are described. Various concepts to overcome limitations associated with state‐of‐the‐art power module packaging presented in the literature are summarized and evaluated. A novel power module design comprising a 650 V, 300 A half‐bridge with integrated direct current–link and gate drivers is proposed. The results of a finite‐element analysis of its parasitic elements and subsequent double‐pulse test simulation are presented.

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A Compact Double-Sided Cooling 650V/30A GaN Power Module With Low Parasitic Parameters

Cited by 43 publications

References 41 publications

Fundamental Modeling of the Switching Transition in High-Speed Power Electronics

Fundamental Modeling of the Switching Transition in High-Speed Power Electronics

Understanding of multiway heat extraction using peripheral diamond in an AlGaN/GaN high electron mobility transistor by electrothermal simulations

Power Module Design for GaN Transistors Enabling High Switching Speed in Multi‐Kilowatt Applications

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