A compact Ka-band SPDT switch with high isolation

Abstract

This paper presents a Ka-band high isolation singlepole-double-throw (SPDT) switch using 0.13μm CMOS process. The switch has a measured insertion loss of 2.7-3.7 dB and an input 1-dB compression power (P 1dB ) of 8 dBm at 35 GHz. Via using the shunt NMOS topology and high quality factor match networks, 33-50 dB measured isolation is obtained within the frequency range of 30-45GHz. The switch core occupies 160 180 μm 2 chip area.Index Terms-Ka-band, SPDT, high isolation, CMOS, T/R switch.