A compact model for dual-gate GaAs PHEMT and application for power amplifier design

Abstract

A compact model of the biased dual-gate GaAs pHEMT device is proposed. The biased dual-gate pHEMT is considered as one macro unit to simplify the model and facilitate simulation. We derive the model based on analytical formulation and represent it with a simplified circuit containing only eight elements. The extrinsic elements are extracted using improved open-short method with a larger frequency range than traditional method. The simulated S-parameters based on the proposed model agree with the measured results well up to 40 GHz for 0.25 um dual-gate GaAs pHEMT devices. In addition, the large-signal model is constructed with a new empirical drain current model. A 2.4 GHz power amplifier (PA) is designed using the proposed model, and the measurement results agree well with the simulation.

An 8.1-W, 50.9% efficient continuous Class-F mode power amplifier developed using 0.25-μm GaN/SiC technology for 5G NR n79 band

“…By contrast, gallium arsenide (GaAs) technology offers the advantages of high power density and high gains. GaAs technology is traditionally considered a strong candidate [7,8,9]. However, to achieve high Pout for sub-6-GHz microcells, gallium nitride (GaN) offers clear advantages.…”