A compact network for eliminating parametric oscillations in high power MMIC amplifiers

Teeter, D.A.; Platzker, A.; Bourque, R.F.

doi:10.1109/mwsym.1999.779547

Cited by 34 publications

(13 citation statements)

References 7 publications

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“…Due to the high level of output power reached and in order to reduce both DC and RF losses in the transmission lines of matching and biasing networks, electroplated gold layer of 6µm thickness was deposited on the output combiner as well as on the first and on the interstage combiners. A parallel RC network in series at the input of each transistor enhances the stability of HPAs and prevents the occurrence of parametric oscillation phenomena [5]. The simulation of the stability of these amplifiers was first performed in linear operation mode at the quiescent biasing point.…”

Section: Amplifier Designmentioning

confidence: 99%

43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC Amplifiers

Piotrowicz¹,

Ouarch²,

Chartier³

et al. 2010

2010 IEEE MTT-S International Microwave Symposium

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Section: Amplifier Designmentioning

confidence: 99%

43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC Amplifiers

Piotrowicz¹,

Ouarch²,

Chartier³

et al. 2010

2010 IEEE MTT-S International Microwave Symposium

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“…11. RC networks are also used to prevent parametric and out-of-band oscillations (Teeter et al, 1999).…”

Section: Unit Cell Stabilizationmentioning

confidence: 99%

“…Usually, the instability is cancelled using notch filters (like RC networks (Teeter et al, 1999)) at the oscillation frequency or resistors to add loss in the oscillation feedback loop. For instance, resistors between the transistors (R o ) can be added to prevent odd-mode oscillations, see Fig.…”

Section: Global Stability Analysismentioning

confidence: 99%

Broadband GaN MMIC Power Amplifiers design

Gonzalez-Garrido¹,

Grajal²

2010

Microwave and Millimeter Wave Technologies Modern UWB Antennas and Equipment

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AlGaN/GaN HEMT TechnologyFirst of all, MMIC GaN technology has to be evaluated. High power GaN devices operate at high temperature and high-dissipated power due to the high power density of performance. Therefore, the use of substrates with high thermal conductivity like the silicon carbide (SiC) is preferred. GaN technological process is still immature and complex. However, gate lithography resolution lower than 0.2 m and AlGaN/GaN epi-structures on 100-mm SiC substrates are already available (Milligan et al., 2007). 22www.intechopen.com

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“…OWER amplifiers (PAs) often exhibit unstable behavior from a certain level of the input power [1]- [4]. Frequency divisions by two and oscillations at incommensurate frequencies can be predicted through a large-signal stability analysis of the amplifier solution [4]- [7].…”

mentioning

confidence: 99%

Analysis and elimination of hysteresis and noisy precursors in power amplifiers

Jeon

Suárez

Rutledge

2006

IEEE Trans. Microwave Theory Techn.

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Abstract-Power amplifiers (PAs) often exhibit instabilities leading to frequency division by two or oscillations at incommensurate frequencies. This undesired behavior can be detected through a large-signal stability analysis of the solution. However, other commonly observed phenomena are still difficult to predict and eliminate. In this paper, the anomalous behavior observed in a Class-E PA is analyzed in detail. It involves hysteresis in the power-transfer curve, oscillation, and noisy precursors. The precursors are pronounced bumps in the power spectrum due to noise amplification under a small stability margin. The correction of the amplifier performance has required the development of a new technique for the elimination of the hysteresis. Instead of a trial-and-error procedure, this technique, of general application to circuit design, makes use of bifurcation concepts to suppress the hysteresis phenomenon through a single simulation on harmonic-balance software. Another objective has been the investigation of the circuit characteristics that make the noisy precursors observable in practical circuits and a technique has been derived for their elimination from the amplifier output spectrum. All the different techniques have been experimentally validated.

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A compact network for eliminating parametric oscillations in high power MMIC amplifiers

Cited by 34 publications

References 7 publications

43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC Amplifiers

43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC Amplifiers

Broadband GaN MMIC Power Amplifiers design

Analysis and elimination of hysteresis and noisy precursors in power amplifiers

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